Crystallization and annealing effects of sputtered tin alloy films on electromagnetic interference shielding

Fei Shuo Hung, Fei Yi Hung, Che Ming Chiang

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)

Abstract

Sn, Al and Cu not only possess electromagnetic interference (EMI) shield efficiency, but also have acceptable costs. In this study, sputtered Sn-Al thin films and Sn-Cu thin films were used to investigate the effect of the crystallization mechanism and film thickness on the electromagnetic interference (EMI) characteristics. The results show that Sn-xAl film increased the electromagnetic interference (EMI) shielding after annealing. For as-sputtered Sn-xCu films with higher Cu atomic concentration, the low frequency EMI shielding could not be improved. After annealing, the Sn-Cu thin film with lower Cu content possessed excellent EMI shielding at lower frequencies, but had an inverse tendency at higher frequencies. For both the Sn-xAl and Sn-xCu thin films after crystallization treatment, the sputtered films had higher electrical conductivity, however the EMI shielding was not enhanced significantly.

Original languageEnglish
Pages (from-to)3733-3738
Number of pages6
JournalApplied Surface Science
Volume257
Issue number8
DOIs
Publication statusPublished - 2011 Feb 1

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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