Crystallization effect of Al-Ag alloying layer in PL enhancement of ZnO thin film

Zhan Shuo Hu; Fei Yi Hung; Shoou Jinn Chang; Kuan Jen Chen; Yue Zhang Chen

doi:10.1016/j.intermet.2010.03.020

Crystallization effect of Al-Ag alloying layer in PL enhancement of ZnO thin film

Zhan Shuo Hu, Fei Yi Hung, Shoou Jinn Chang, Kuan Jen Chen, Yue Zhang Chen

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

ZnO/Ag/Al multilayer structures were deposited on glass with different annealing conditions and were compared with as-deposited ZnO thin film. The results show that the alloying effects of the Al-Ag film not only induced different interface mechanisms through annealing, but also improved the optoelectronic properties. The alloying ratio of the Al-Ag film increased with the increasing temperatures. Due to the higher ratio of Al-Ag alloying layer, some atoms diffused into the ZnO matrix at higher annealing temperatures, and the PL of the ZnO thin film was destroyed. Oppositely, at lower annealing temperatures, the Al-Ag alloying layer had a better ratio (Al:Ag = 4:1) which could enhance the PL spectra of the ZnO thin film.

Original language	English
Pages (from-to)	1428-1431
Number of pages	4
Journal	Intermetallics
Volume	18
Issue number	8
DOIs	https://doi.org/10.1016/j.intermet.2010.03.020
Publication status	Published - 2010 Aug

All Science Journal Classification (ASJC) codes

Chemistry(all)
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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title = "Crystallization effect of Al-Ag alloying layer in PL enhancement of ZnO thin film",

abstract = "ZnO/Ag/Al multilayer structures were deposited on glass with different annealing conditions and were compared with as-deposited ZnO thin film. The results show that the alloying effects of the Al-Ag film not only induced different interface mechanisms through annealing, but also improved the optoelectronic properties. The alloying ratio of the Al-Ag film increased with the increasing temperatures. Due to the higher ratio of Al-Ag alloying layer, some atoms diffused into the ZnO matrix at higher annealing temperatures, and the PL of the ZnO thin film was destroyed. Oppositely, at lower annealing temperatures, the Al-Ag alloying layer had a better ratio (Al:Ag = 4:1) which could enhance the PL spectra of the ZnO thin film.",

author = "Hu, {Zhan Shuo} and Hung, {Fei Yi} and Chang, {Shoou Jinn} and Chen, {Kuan Jen} and Chen, {Yue Zhang}",

year = "2010",

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language = "English",

volume = "18",

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T1 - Crystallization effect of Al-Ag alloying layer in PL enhancement of ZnO thin film

AU - Hu, Zhan Shuo

AU - Hung, Fei Yi

AU - Chang, Shoou Jinn

AU - Chen, Kuan Jen

AU - Chen, Yue Zhang

PY - 2010/8

Y1 - 2010/8

N2 - ZnO/Ag/Al multilayer structures were deposited on glass with different annealing conditions and were compared with as-deposited ZnO thin film. The results show that the alloying effects of the Al-Ag film not only induced different interface mechanisms through annealing, but also improved the optoelectronic properties. The alloying ratio of the Al-Ag film increased with the increasing temperatures. Due to the higher ratio of Al-Ag alloying layer, some atoms diffused into the ZnO matrix at higher annealing temperatures, and the PL of the ZnO thin film was destroyed. Oppositely, at lower annealing temperatures, the Al-Ag alloying layer had a better ratio (Al:Ag = 4:1) which could enhance the PL spectra of the ZnO thin film.

AB - ZnO/Ag/Al multilayer structures were deposited on glass with different annealing conditions and were compared with as-deposited ZnO thin film. The results show that the alloying effects of the Al-Ag film not only induced different interface mechanisms through annealing, but also improved the optoelectronic properties. The alloying ratio of the Al-Ag film increased with the increasing temperatures. Due to the higher ratio of Al-Ag alloying layer, some atoms diffused into the ZnO matrix at higher annealing temperatures, and the PL of the ZnO thin film was destroyed. Oppositely, at lower annealing temperatures, the Al-Ag alloying layer had a better ratio (Al:Ag = 4:1) which could enhance the PL spectra of the ZnO thin film.

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Crystallization effect of Al-Ag alloying layer in PL enhancement of ZnO thin film

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