Crystallization effect of Al-Ag alloying layer in PL enhancement of ZnO thin film

Zhan Shuo Hu, Fei Yi Hung, Shoou Jinn Chang, Kuan Jen Chen, Yue Zhang Chen

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


ZnO/Ag/Al multilayer structures were deposited on glass with different annealing conditions and were compared with as-deposited ZnO thin film. The results show that the alloying effects of the Al-Ag film not only induced different interface mechanisms through annealing, but also improved the optoelectronic properties. The alloying ratio of the Al-Ag film increased with the increasing temperatures. Due to the higher ratio of Al-Ag alloying layer, some atoms diffused into the ZnO matrix at higher annealing temperatures, and the PL of the ZnO thin film was destroyed. Oppositely, at lower annealing temperatures, the Al-Ag alloying layer had a better ratio (Al:Ag = 4:1) which could enhance the PL spectra of the ZnO thin film.

Original languageEnglish
Pages (from-to)1428-1431
Number of pages4
Issue number8
Publication statusPublished - 2010 Aug

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry


Dive into the research topics of 'Crystallization effect of Al-Ag alloying layer in PL enhancement of ZnO thin film'. Together they form a unique fingerprint.

Cite this