Crystallization effect of Al-Ag alloying layer in PL enhancement of ZnO thin film

Zhan Shuo Hu, Fei Yi Hung, Shoou Jinn Chang, Kuan Jen Chen, Yue Zhang Chen

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

ZnO/Ag/Al multilayer structures were deposited on glass with different annealing conditions and were compared with as-deposited ZnO thin film. The results show that the alloying effects of the Al-Ag film not only induced different interface mechanisms through annealing, but also improved the optoelectronic properties. The alloying ratio of the Al-Ag film increased with the increasing temperatures. Due to the higher ratio of Al-Ag alloying layer, some atoms diffused into the ZnO matrix at higher annealing temperatures, and the PL of the ZnO thin film was destroyed. Oppositely, at lower annealing temperatures, the Al-Ag alloying layer had a better ratio (Al:Ag = 4:1) which could enhance the PL spectra of the ZnO thin film.

Original languageEnglish
Pages (from-to)1428-1431
Number of pages4
JournalIntermetallics
Volume18
Issue number8
DOIs
Publication statusPublished - 2010 Aug 1

Fingerprint

Crystallization
Alloying
Annealing
Thin films
Optoelectronic devices
Temperature
Multilayers
Glass
Atoms

All Science Journal Classification (ASJC) codes

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Chemistry
  • Metals and Alloys
  • Chemistry(all)

Cite this

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title = "Crystallization effect of Al-Ag alloying layer in PL enhancement of ZnO thin film",
abstract = "ZnO/Ag/Al multilayer structures were deposited on glass with different annealing conditions and were compared with as-deposited ZnO thin film. The results show that the alloying effects of the Al-Ag film not only induced different interface mechanisms through annealing, but also improved the optoelectronic properties. The alloying ratio of the Al-Ag film increased with the increasing temperatures. Due to the higher ratio of Al-Ag alloying layer, some atoms diffused into the ZnO matrix at higher annealing temperatures, and the PL of the ZnO thin film was destroyed. Oppositely, at lower annealing temperatures, the Al-Ag alloying layer had a better ratio (Al:Ag = 4:1) which could enhance the PL spectra of the ZnO thin film.",
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Crystallization effect of Al-Ag alloying layer in PL enhancement of ZnO thin film. / Hu, Zhan Shuo; Hung, Fei Yi; Chang, Shoou Jinn; Chen, Kuan Jen; Chen, Yue Zhang.

In: Intermetallics, Vol. 18, No. 8, 01.08.2010, p. 1428-1431.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Crystallization effect of Al-Ag alloying layer in PL enhancement of ZnO thin film

AU - Hu, Zhan Shuo

AU - Hung, Fei Yi

AU - Chang, Shoou Jinn

AU - Chen, Kuan Jen

AU - Chen, Yue Zhang

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N2 - ZnO/Ag/Al multilayer structures were deposited on glass with different annealing conditions and were compared with as-deposited ZnO thin film. The results show that the alloying effects of the Al-Ag film not only induced different interface mechanisms through annealing, but also improved the optoelectronic properties. The alloying ratio of the Al-Ag film increased with the increasing temperatures. Due to the higher ratio of Al-Ag alloying layer, some atoms diffused into the ZnO matrix at higher annealing temperatures, and the PL of the ZnO thin film was destroyed. Oppositely, at lower annealing temperatures, the Al-Ag alloying layer had a better ratio (Al:Ag = 4:1) which could enhance the PL spectra of the ZnO thin film.

AB - ZnO/Ag/Al multilayer structures were deposited on glass with different annealing conditions and were compared with as-deposited ZnO thin film. The results show that the alloying effects of the Al-Ag film not only induced different interface mechanisms through annealing, but also improved the optoelectronic properties. The alloying ratio of the Al-Ag film increased with the increasing temperatures. Due to the higher ratio of Al-Ag alloying layer, some atoms diffused into the ZnO matrix at higher annealing temperatures, and the PL of the ZnO thin film was destroyed. Oppositely, at lower annealing temperatures, the Al-Ag alloying layer had a better ratio (Al:Ag = 4:1) which could enhance the PL spectra of the ZnO thin film.

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