Crystallization effect of Al-Ag alloying layer in PL enhancement of ZnO thin film

Zhan Shuo Hu; Fei Yi Hung; Shoou Jinn Chang; Kuan Jen Chen; Yue Zhang Chen

doi:10.1016/j.intermet.2010.03.020

Crystallization effect of Al-Ag alloying layer in PL enhancement of ZnO thin film

Zhan Shuo Hu
, Fei Yi Hung
, Shoou Jinn Chang
, Kuan Jen Chen
, Yue Zhang Chen

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

ZnO/Ag/Al multilayer structures were deposited on glass with different annealing conditions and were compared with as-deposited ZnO thin film. The results show that the alloying effects of the Al-Ag film not only induced different interface mechanisms through annealing, but also improved the optoelectronic properties. The alloying ratio of the Al-Ag film increased with the increasing temperatures. Due to the higher ratio of Al-Ag alloying layer, some atoms diffused into the ZnO matrix at higher annealing temperatures, and the PL of the ZnO thin film was destroyed. Oppositely, at lower annealing temperatures, the Al-Ag alloying layer had a better ratio (Al:Ag = 4:1) which could enhance the PL spectra of the ZnO thin film.

Original language	English
Pages (from-to)	1428-1431
Number of pages	4
Journal	Intermetallics
Volume	18
Issue number	8
DOIs	https://doi.org/10.1016/j.intermet.2010.03.020
Publication status	Published - 2010 Aug

All Science Journal Classification (ASJC) codes

General Chemistry
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/j.intermet.2010.03.020

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title = "Crystallization effect of Al-Ag alloying layer in PL enhancement of ZnO thin film",

abstract = "ZnO/Ag/Al multilayer structures were deposited on glass with different annealing conditions and were compared with as-deposited ZnO thin film. The results show that the alloying effects of the Al-Ag film not only induced different interface mechanisms through annealing, but also improved the optoelectronic properties. The alloying ratio of the Al-Ag film increased with the increasing temperatures. Due to the higher ratio of Al-Ag alloying layer, some atoms diffused into the ZnO matrix at higher annealing temperatures, and the PL of the ZnO thin film was destroyed. Oppositely, at lower annealing temperatures, the Al-Ag alloying layer had a better ratio (Al:Ag = 4:1) which could enhance the PL spectra of the ZnO thin film.",

author = "Hu, \{Zhan Shuo\} and Hung, \{Fei Yi\} and Chang, \{Shoou Jinn\} and Chen, \{Kuan Jen\} and Chen, \{Yue Zhang\}",

year = "2010",

month = aug,

doi = "10.1016/j.intermet.2010.03.020",

language = "English",

volume = "18",

pages = "1428--1431",

journal = "Intermetallics",

issn = "0966-9795",

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TY - JOUR

T1 - Crystallization effect of Al-Ag alloying layer in PL enhancement of ZnO thin film

AU - Hu, Zhan Shuo

AU - Hung, Fei Yi

AU - Chang, Shoou Jinn

AU - Chen, Kuan Jen

AU - Chen, Yue Zhang

PY - 2010/8

Y1 - 2010/8

N2 - ZnO/Ag/Al multilayer structures were deposited on glass with different annealing conditions and were compared with as-deposited ZnO thin film. The results show that the alloying effects of the Al-Ag film not only induced different interface mechanisms through annealing, but also improved the optoelectronic properties. The alloying ratio of the Al-Ag film increased with the increasing temperatures. Due to the higher ratio of Al-Ag alloying layer, some atoms diffused into the ZnO matrix at higher annealing temperatures, and the PL of the ZnO thin film was destroyed. Oppositely, at lower annealing temperatures, the Al-Ag alloying layer had a better ratio (Al:Ag = 4:1) which could enhance the PL spectra of the ZnO thin film.

AB - ZnO/Ag/Al multilayer structures were deposited on glass with different annealing conditions and were compared with as-deposited ZnO thin film. The results show that the alloying effects of the Al-Ag film not only induced different interface mechanisms through annealing, but also improved the optoelectronic properties. The alloying ratio of the Al-Ag film increased with the increasing temperatures. Due to the higher ratio of Al-Ag alloying layer, some atoms diffused into the ZnO matrix at higher annealing temperatures, and the PL of the ZnO thin film was destroyed. Oppositely, at lower annealing temperatures, the Al-Ag alloying layer had a better ratio (Al:Ag = 4:1) which could enhance the PL spectra of the ZnO thin film.

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DO - 10.1016/j.intermet.2010.03.020

M3 - Article

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SN - 0966-9795

VL - 18

SP - 1428

EP - 1431

JO - Intermetallics

JF - Intermetallics

IS - 8

ER -

Crystallization effect of Al-Ag alloying layer in PL enhancement of ZnO thin film

Abstract

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