Crystallization mechanism and Raman characteristics of ZnO/In/ZnO thin film using an electrical current method

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

ZnO/In/ZnO tri-layer thin films were designed and fabricated by RF sputtering on copolymer substrate. Under an electrical current, the thermoelectric effect of direct current (DC) reduced the electrical resistance and improved the crystallization and Raman properties. Also, indium atoms had migrated into the ZnO matrix and a diffusion layer in the ZnO/In interface had grown. The electrical current induced temperature is ∼140°C and the copolymer substrate suffers no damage and so can be applied to the low temperature optoelectronic devices.

Original languageEnglish
Pages (from-to)1138-1141
Number of pages4
JournalMaterials Transactions
Volume52
Issue number6
DOIs
Publication statusPublished - 2011 Jun 1

Fingerprint

Crystallization
copolymers
Copolymers
Thermoelectricity
crystallization
Thin films
Indium
Acoustic impedance
Induced currents
Substrates
thin films
optoelectronic devices
electrical resistance
Optoelectronic devices
Sputtering
indium
sputtering
direct current
damage
Atoms

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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abstract = "ZnO/In/ZnO tri-layer thin films were designed and fabricated by RF sputtering on copolymer substrate. Under an electrical current, the thermoelectric effect of direct current (DC) reduced the electrical resistance and improved the crystallization and Raman properties. Also, indium atoms had migrated into the ZnO matrix and a diffusion layer in the ZnO/In interface had grown. The electrical current induced temperature is ∼140°C and the copolymer substrate suffers no damage and so can be applied to the low temperature optoelectronic devices.",
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Crystallization mechanism and Raman characteristics of ZnO/In/ZnO thin film using an electrical current method. / Hung, Fei Yi.

In: Materials Transactions, Vol. 52, No. 6, 01.06.2011, p. 1138-1141.

Research output: Contribution to journalArticle

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