Cu/Cu2O nanocomposite films as a p-type modified layer for efficient perovskite solar cells

You Jyun Chen, Ming Hsien Li, Jung-Chun Huang, Chao-Yu Chen

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Cu/Cu2O films grown by ion beam sputtering were used as p-type modified layers to improve the efficiency and stability of perovskite solar cells (PSCs) with an n-i-p heterojunction structure. The ratio of Cu to Cu2O in the films can be tuned by the oxygen flow ratio (O2/(O2 + Ar)) during the sputtering of copper. Auger electron spectroscopy was performed to determine the elemental composition and chemical state of Cu in the films. Ultraviolet photoelectron spectroscopy and photoluminescence spectroscopy revealed that the valence band maximum of the p-type Cu/Cu2O matches well with the perovskite. The Cu/Cu2O film not only acts as a p-type modified layer but also plays the role of an electron blocking buffer layer. By introducing the p-type Cu/Cu2O films between the low-mobility hole transport material, spiro-OMeTAD, and the Ag electrode in the PSCs, the device durability and power conversion efficiency (PCE) were effectively improved as compared to the reference devices without the Cu/Cu2O interlayer. The enhanced PCE is mainly attributed to the high hole mobility of the p-type Cu/Cu2O film. Additionally, the Cu/Cu2O film serves as a protective layer against the penetration of humidity and Ag into the perovskite active layer.

Original languageEnglish
Article number7646
JournalScientific reports
Volume8
Issue number1
DOIs
Publication statusPublished - 2018 Dec 1

Fingerprint

nanocomposites
solar cells
hole mobility
sputtering
ultraviolet spectroscopy
durability
Auger spectroscopy
electron spectroscopy
humidity
heterojunctions
interlayers
penetration
buffers
ion beams
photoelectron spectroscopy
valence
photoluminescence
copper
electrodes
oxygen

All Science Journal Classification (ASJC) codes

  • General

Cite this

@article{d3c39f68586d493db391189704e75d72,
title = "Cu/Cu2O nanocomposite films as a p-type modified layer for efficient perovskite solar cells",
abstract = "Cu/Cu2O films grown by ion beam sputtering were used as p-type modified layers to improve the efficiency and stability of perovskite solar cells (PSCs) with an n-i-p heterojunction structure. The ratio of Cu to Cu2O in the films can be tuned by the oxygen flow ratio (O2/(O2 + Ar)) during the sputtering of copper. Auger electron spectroscopy was performed to determine the elemental composition and chemical state of Cu in the films. Ultraviolet photoelectron spectroscopy and photoluminescence spectroscopy revealed that the valence band maximum of the p-type Cu/Cu2O matches well with the perovskite. The Cu/Cu2O film not only acts as a p-type modified layer but also plays the role of an electron blocking buffer layer. By introducing the p-type Cu/Cu2O films between the low-mobility hole transport material, spiro-OMeTAD, and the Ag electrode in the PSCs, the device durability and power conversion efficiency (PCE) were effectively improved as compared to the reference devices without the Cu/Cu2O interlayer. The enhanced PCE is mainly attributed to the high hole mobility of the p-type Cu/Cu2O film. Additionally, the Cu/Cu2O film serves as a protective layer against the penetration of humidity and Ag into the perovskite active layer.",
author = "Chen, {You Jyun} and Li, {Ming Hsien} and Jung-Chun Huang and Chao-Yu Chen",
year = "2018",
month = "12",
day = "1",
doi = "10.1038/s41598-018-25975-8",
language = "English",
volume = "8",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",
number = "1",

}

Cu/Cu2O nanocomposite films as a p-type modified layer for efficient perovskite solar cells. / Chen, You Jyun; Li, Ming Hsien; Huang, Jung-Chun; Chen, Chao-Yu.

In: Scientific reports, Vol. 8, No. 1, 7646, 01.12.2018.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Cu/Cu2O nanocomposite films as a p-type modified layer for efficient perovskite solar cells

AU - Chen, You Jyun

AU - Li, Ming Hsien

AU - Huang, Jung-Chun

AU - Chen, Chao-Yu

PY - 2018/12/1

Y1 - 2018/12/1

N2 - Cu/Cu2O films grown by ion beam sputtering were used as p-type modified layers to improve the efficiency and stability of perovskite solar cells (PSCs) with an n-i-p heterojunction structure. The ratio of Cu to Cu2O in the films can be tuned by the oxygen flow ratio (O2/(O2 + Ar)) during the sputtering of copper. Auger electron spectroscopy was performed to determine the elemental composition and chemical state of Cu in the films. Ultraviolet photoelectron spectroscopy and photoluminescence spectroscopy revealed that the valence band maximum of the p-type Cu/Cu2O matches well with the perovskite. The Cu/Cu2O film not only acts as a p-type modified layer but also plays the role of an electron blocking buffer layer. By introducing the p-type Cu/Cu2O films between the low-mobility hole transport material, spiro-OMeTAD, and the Ag electrode in the PSCs, the device durability and power conversion efficiency (PCE) were effectively improved as compared to the reference devices without the Cu/Cu2O interlayer. The enhanced PCE is mainly attributed to the high hole mobility of the p-type Cu/Cu2O film. Additionally, the Cu/Cu2O film serves as a protective layer against the penetration of humidity and Ag into the perovskite active layer.

AB - Cu/Cu2O films grown by ion beam sputtering were used as p-type modified layers to improve the efficiency and stability of perovskite solar cells (PSCs) with an n-i-p heterojunction structure. The ratio of Cu to Cu2O in the films can be tuned by the oxygen flow ratio (O2/(O2 + Ar)) during the sputtering of copper. Auger electron spectroscopy was performed to determine the elemental composition and chemical state of Cu in the films. Ultraviolet photoelectron spectroscopy and photoluminescence spectroscopy revealed that the valence band maximum of the p-type Cu/Cu2O matches well with the perovskite. The Cu/Cu2O film not only acts as a p-type modified layer but also plays the role of an electron blocking buffer layer. By introducing the p-type Cu/Cu2O films between the low-mobility hole transport material, spiro-OMeTAD, and the Ag electrode in the PSCs, the device durability and power conversion efficiency (PCE) were effectively improved as compared to the reference devices without the Cu/Cu2O interlayer. The enhanced PCE is mainly attributed to the high hole mobility of the p-type Cu/Cu2O film. Additionally, the Cu/Cu2O film serves as a protective layer against the penetration of humidity and Ag into the perovskite active layer.

UR - http://www.scopus.com/inward/record.url?scp=85047075417&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85047075417&partnerID=8YFLogxK

U2 - 10.1038/s41598-018-25975-8

DO - 10.1038/s41598-018-25975-8

M3 - Article

VL - 8

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

IS - 1

M1 - 7646

ER -