This study reports the growth of CuO nanowires (NWs) on glass substrate, and the fabrication of CuO-NW field emitter. Using CuO as the adhesion layer, we successfully grew CuO NWs of 2.5 μm average length and 70 nm average diameter by thermal annealing at 450°C for 5 h in air. It was found that turn-ON field of the fabricated field emitters was 4.5 V/m. It was also found that the field enhancement factor β of the fabricated CuO-NW field emitter was 1610.
All Science Journal Classification (ASJC) codes
- Computer Science Applications
- Electrical and Electronic Engineering