CuO-nanowire field emitter prepared on glass substrate

H. T. Hsueh, T. J. Hsueh, S. J. Chang, T. Y. Tsai, F. Y. Hung, S. P. Chang, W. Y. Weng, B. T. Dai

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

This study reports the growth of CuO nanowires (NWs) on glass substrate, and the fabrication of CuO-NW field emitter. Using CuO as the adhesion layer, we successfully grew CuO NWs of 2.5 μm average length and 70 nm average diameter by thermal annealing at 450°C for 5 h in air. It was found that turn-ON field of the fabricated field emitters was 4.5 V/m. It was also found that the field enhancement factor β of the fabricated CuO-NW field emitter was 1610.

Original languageEnglish
Article number5724303
Pages (from-to)1161-1165
Number of pages5
JournalIEEE Transactions on Nanotechnology
Volume10
Issue number5
DOIs
Publication statusPublished - 2011 Sept

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering

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