Abstract
A newly proposed method, called the current-dependent hot-electron stress, is used to study InGaP-gated and AlGaAs-gated low noise PHEMT devices with different drain currents at high drain voltages. The impact ionization between gate and drain is the major mechanism affecting devices during hot-electron stressing, which are excited by the high gate-to-drain electric fields. However, the measure of the effects of the impact ionization related to the drain current during hot-electron stressing is less discussed in the published literatures. In this work, the designed hot-electron stressed conditions, which are related to the different drain currents, are used to demonstrate the influence of drain currents in hot-electron stresses and, furthermore, to estimate and compare InGaP-gated with AlGaAs-gated PHEMTs.
| Original language | English |
|---|---|
| Pages (from-to) | 2038-2043 |
| Number of pages | 6 |
| Journal | Microelectronics Reliability |
| Volume | 46 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2006 Dec 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Safety, Risk, Reliability and Quality
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
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Current-dependent hot-electron stresses on InGaP-gated and AlGaAs-gated low noise PHEMTs. / Huang, Hou Kuei; Chang, Cieh Pin; Houng, Mau-phon; Wang, Yeong-Her.
In: Microelectronics Reliability, Vol. 46, No. 12, 01.12.2006, p. 2038-2043.Research output: Contribution to journal › Article
TY - JOUR
T1 - Current-dependent hot-electron stresses on InGaP-gated and AlGaAs-gated low noise PHEMTs
AU - Huang, Hou Kuei
AU - Chang, Cieh Pin
AU - Houng, Mau-phon
AU - Wang, Yeong-Her
PY - 2006/12/1
Y1 - 2006/12/1
N2 - A newly proposed method, called the current-dependent hot-electron stress, is used to study InGaP-gated and AlGaAs-gated low noise PHEMT devices with different drain currents at high drain voltages. The impact ionization between gate and drain is the major mechanism affecting devices during hot-electron stressing, which are excited by the high gate-to-drain electric fields. However, the measure of the effects of the impact ionization related to the drain current during hot-electron stressing is less discussed in the published literatures. In this work, the designed hot-electron stressed conditions, which are related to the different drain currents, are used to demonstrate the influence of drain currents in hot-electron stresses and, furthermore, to estimate and compare InGaP-gated with AlGaAs-gated PHEMTs.
AB - A newly proposed method, called the current-dependent hot-electron stress, is used to study InGaP-gated and AlGaAs-gated low noise PHEMT devices with different drain currents at high drain voltages. The impact ionization between gate and drain is the major mechanism affecting devices during hot-electron stressing, which are excited by the high gate-to-drain electric fields. However, the measure of the effects of the impact ionization related to the drain current during hot-electron stressing is less discussed in the published literatures. In this work, the designed hot-electron stressed conditions, which are related to the different drain currents, are used to demonstrate the influence of drain currents in hot-electron stresses and, furthermore, to estimate and compare InGaP-gated with AlGaAs-gated PHEMTs.
UR - http://www.scopus.com/inward/record.url?scp=33748936316&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33748936316&partnerID=8YFLogxK
U2 - 10.1016/j.microrel.2006.02.014
DO - 10.1016/j.microrel.2006.02.014
M3 - Article
VL - 46
SP - 2038
EP - 2043
JO - Microelectronics Reliability
JF - Microelectronics Reliability
SN - 0026-2714
IS - 12
ER -