Current-dependent hot-electron stresses on InGaP-gated and AlGaAs-gated low noise PHEMTs

Hou Kuei Huang, Cieh Pin Chang, Mau-phon Houng, Yeong-Her Wang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A newly proposed method, called the current-dependent hot-electron stress, is used to study InGaP-gated and AlGaAs-gated low noise PHEMT devices with different drain currents at high drain voltages. The impact ionization between gate and drain is the major mechanism affecting devices during hot-electron stressing, which are excited by the high gate-to-drain electric fields. However, the measure of the effects of the impact ionization related to the drain current during hot-electron stressing is less discussed in the published literatures. In this work, the designed hot-electron stressed conditions, which are related to the different drain currents, are used to demonstrate the influence of drain currents in hot-electron stresses and, furthermore, to estimate and compare InGaP-gated with AlGaAs-gated PHEMTs.

Original languageEnglish
Pages (from-to)2038-2043
Number of pages6
JournalMicroelectronics Reliability
Volume46
Issue number12
DOIs
Publication statusPublished - 2006 Dec 1

Fingerprint

Hot electrons
hot electrons
low noise
Drain current
aluminum gallium arsenides
Impact ionization
ionization
high voltages
Electric fields
electric fields
Electric potential
estimates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

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title = "Current-dependent hot-electron stresses on InGaP-gated and AlGaAs-gated low noise PHEMTs",
abstract = "A newly proposed method, called the current-dependent hot-electron stress, is used to study InGaP-gated and AlGaAs-gated low noise PHEMT devices with different drain currents at high drain voltages. The impact ionization between gate and drain is the major mechanism affecting devices during hot-electron stressing, which are excited by the high gate-to-drain electric fields. However, the measure of the effects of the impact ionization related to the drain current during hot-electron stressing is less discussed in the published literatures. In this work, the designed hot-electron stressed conditions, which are related to the different drain currents, are used to demonstrate the influence of drain currents in hot-electron stresses and, furthermore, to estimate and compare InGaP-gated with AlGaAs-gated PHEMTs.",
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Current-dependent hot-electron stresses on InGaP-gated and AlGaAs-gated low noise PHEMTs. / Huang, Hou Kuei; Chang, Cieh Pin; Houng, Mau-phon; Wang, Yeong-Her.

In: Microelectronics Reliability, Vol. 46, No. 12, 01.12.2006, p. 2038-2043.

Research output: Contribution to journalArticle

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AU - Huang, Hou Kuei

AU - Chang, Cieh Pin

AU - Houng, Mau-phon

AU - Wang, Yeong-Her

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