TY - JOUR
T1 - Current-dependent hot-electron stresses on InGaP-gated and AlGaAs-gated low noise PHEMTs
AU - Huang, Hou Kuei
AU - Chang, Cieh Pin
AU - Houng, Mau Phon
AU - Wang, Yeong Her
N1 - Funding Information:
The work was supported in part by the National Science Council under the contracts NSC94-2215-E-006-001, NSC94-2215-E-006-058 and the MOE Program for Promoting Academic Excellence of Universities under the grant number A-91E-FA08-1-4. The Foundation of Chen, Jieh-Chen scholarship, Tainan, Taiwan is also acknowledged for the support of this work.
PY - 2006/12
Y1 - 2006/12
N2 - A newly proposed method, called the current-dependent hot-electron stress, is used to study InGaP-gated and AlGaAs-gated low noise PHEMT devices with different drain currents at high drain voltages. The impact ionization between gate and drain is the major mechanism affecting devices during hot-electron stressing, which are excited by the high gate-to-drain electric fields. However, the measure of the effects of the impact ionization related to the drain current during hot-electron stressing is less discussed in the published literatures. In this work, the designed hot-electron stressed conditions, which are related to the different drain currents, are used to demonstrate the influence of drain currents in hot-electron stresses and, furthermore, to estimate and compare InGaP-gated with AlGaAs-gated PHEMTs.
AB - A newly proposed method, called the current-dependent hot-electron stress, is used to study InGaP-gated and AlGaAs-gated low noise PHEMT devices with different drain currents at high drain voltages. The impact ionization between gate and drain is the major mechanism affecting devices during hot-electron stressing, which are excited by the high gate-to-drain electric fields. However, the measure of the effects of the impact ionization related to the drain current during hot-electron stressing is less discussed in the published literatures. In this work, the designed hot-electron stressed conditions, which are related to the different drain currents, are used to demonstrate the influence of drain currents in hot-electron stresses and, furthermore, to estimate and compare InGaP-gated with AlGaAs-gated PHEMTs.
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U2 - 10.1016/j.microrel.2006.02.014
DO - 10.1016/j.microrel.2006.02.014
M3 - Article
AN - SCOPUS:33748936316
VL - 46
SP - 2038
EP - 2043
JO - Microelectronics Reliability
JF - Microelectronics Reliability
SN - 0026-2714
IS - 12
ER -