A method of detecting the upperradiant effect in a semiconductor double-dot system was proposed. By incorporating the InAs quantum dots between a p-i-n junction, the superradiant effect on the stationary tunnel current can be examined by tuning the band gap of the quantum dot. Moreover, the interference effects between two dots can be seen more clearly by incorporating the system inside a microcavity.
|Journal||Physical review letters|
|Publication status||Published - 2003 Apr 25|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)