Current spreading of III-nitride light-emitting diodes using plasma treatment

Hsin Ying Lee; Ke Hao Pan; Chih Chien Lin; Yun Chorng Chang; Fu Jen Kao; Ching Ting Lee

doi:10.1116/1.2753853

Current spreading of III-nitride light-emitting diodes using plasma treatment

Hsin Ying Lee, Ke Hao Pan, Chih Chien Lin, Yun Chorng Chang, Fu Jen Kao, Ching Ting Lee

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

In this study, (C F4 + O2) plasma is used to selectively treat the p -type GaN region underneath the bonding pad of the anode electrode of III-nitride light-emitting diodes (LEDs). A more uniform light emission distribution is observed in the far-field pattern of the plasma-treated devices and a 16% enhancement of the output intensity under the same biasing current is obtained. The maximum current that can be applied is also higher for the plasma-treated device. Not only does the plasma treatment of the p-GaN layer lead to a highly insulating region but also it does not degrade the device performance. Results from this study indicate that the plasma treatment is able to improve the current spreading of the III-nitride LEDs.

Original language	English
Pages (from-to)	1280-1283
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	25
Issue number	4
DOIs	https://doi.org/10.1116/1.2753853
Publication status	Published - 2007

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.2753853

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title = "Current spreading of III-nitride light-emitting diodes using plasma treatment",

abstract = "In this study, (C F4 + O2) plasma is used to selectively treat the p -type GaN region underneath the bonding pad of the anode electrode of III-nitride light-emitting diodes (LEDs). A more uniform light emission distribution is observed in the far-field pattern of the plasma-treated devices and a 16% enhancement of the output intensity under the same biasing current is obtained. The maximum current that can be applied is also higher for the plasma-treated device. Not only does the plasma treatment of the p-GaN layer lead to a highly insulating region but also it does not degrade the device performance. Results from this study indicate that the plasma treatment is able to improve the current spreading of the III-nitride LEDs.",

author = "Lee, {Hsin Ying} and Pan, {Ke Hao} and Lin, {Chih Chien} and Chang, {Yun Chorng} and Kao, {Fu Jen} and Lee, {Ching Ting}",

note = "Funding Information: This work was supported by the program of Top 100 University Advancement, Ministry of Education, and the National Science Council of Taiwan of the Republic of China under Contract No. NSC-94-2215-E006-011.",

year = "2007",

doi = "10.1116/1.2753853",

language = "English",

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journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

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T1 - Current spreading of III-nitride light-emitting diodes using plasma treatment

AU - Lee, Hsin Ying

AU - Pan, Ke Hao

AU - Lin, Chih Chien

AU - Chang, Yun Chorng

AU - Kao, Fu Jen

AU - Lee, Ching Ting

N1 - Funding Information: This work was supported by the program of Top 100 University Advancement, Ministry of Education, and the National Science Council of Taiwan of the Republic of China under Contract No. NSC-94-2215-E006-011.

PY - 2007

Y1 - 2007

N2 - In this study, (C F4 + O2) plasma is used to selectively treat the p -type GaN region underneath the bonding pad of the anode electrode of III-nitride light-emitting diodes (LEDs). A more uniform light emission distribution is observed in the far-field pattern of the plasma-treated devices and a 16% enhancement of the output intensity under the same biasing current is obtained. The maximum current that can be applied is also higher for the plasma-treated device. Not only does the plasma treatment of the p-GaN layer lead to a highly insulating region but also it does not degrade the device performance. Results from this study indicate that the plasma treatment is able to improve the current spreading of the III-nitride LEDs.

AB - In this study, (C F4 + O2) plasma is used to selectively treat the p -type GaN region underneath the bonding pad of the anode electrode of III-nitride light-emitting diodes (LEDs). A more uniform light emission distribution is observed in the far-field pattern of the plasma-treated devices and a 16% enhancement of the output intensity under the same biasing current is obtained. The maximum current that can be applied is also higher for the plasma-treated device. Not only does the plasma treatment of the p-GaN layer lead to a highly insulating region but also it does not degrade the device performance. Results from this study indicate that the plasma treatment is able to improve the current spreading of the III-nitride LEDs.

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Current spreading of III-nitride light-emitting diodes using plasma treatment

Abstract

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