Current spreading of III-nitride light-emitting diodes using plasma treatment

Hsin Ying Lee, Ke Hao Pan, Chih Chien Lin, Yun Chorng Chang, Fu Jen Kao, Ching Ting Lee

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

In this study, (C F4 + O2) plasma is used to selectively treat the p -type GaN region underneath the bonding pad of the anode electrode of III-nitride light-emitting diodes (LEDs). A more uniform light emission distribution is observed in the far-field pattern of the plasma-treated devices and a 16% enhancement of the output intensity under the same biasing current is obtained. The maximum current that can be applied is also higher for the plasma-treated device. Not only does the plasma treatment of the p-GaN layer lead to a highly insulating region but also it does not degrade the device performance. Results from this study indicate that the plasma treatment is able to improve the current spreading of the III-nitride LEDs.

Original languageEnglish
Pages (from-to)1280-1283
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume25
Issue number4
DOIs
Publication statusPublished - 2007 Aug 7

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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