Current-voltage characteristics of n-AlMgZnO/p-GaN junction diodes

Kuang Po Hsueh, Po Wei Cheng, Yi Chang Cheng, Jinn-Kong Sheu, Yu Hsiang Yeh, Hsien Chin Chiu, Hsiang Chun Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution


This study investigates the temperature dependence of the current-voltage (I-V) characteristics of Al-doped MgxZn1-xO/p-GaN junction diodes. Specifically, this study reports the deposition of n-type Al-doped MgxZn 1-xO (AMZO) films on p-GaN using a radio-frequency (RF) magnetron sputtering system followed by annealing at 700, 800, 900, and 1000 °C in a nitrogen ambient for 60 seconds, respectively. The AMZO/GaN films were thereafter analyzed using Hall measurement and the x-ray diffraction (XRD) patterns. The XRD results show that the diffraction angles of the annealed AMZO films remain the same as that of GaN without shifting. The n-AMZO/p-GaN diode with 900 °C annealing had the lowest leakage current in forward and reverse bias. However, the leakage current of the diodes did not change significantly with an increase in annealing temperatures. These findings show that the n-AMZO/p-GaN junction diode is feasible for GaN-based heterojunction bipolar transistors (HBTs) and UV light-emitting diodes (LEDs).

Original languageEnglish
Title of host publicationOxide-Based Materials and Devices IV
Publication statusPublished - 2013 May 30
EventOxide-Based Materials and Devices IV - San Francisco, CA, United States
Duration: 2013 Feb 32013 Feb 6

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherOxide-Based Materials and Devices IV
Country/TerritoryUnited States
CitySan Francisco, CA

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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