CVD diamond grown by microwave plasma in mixtures of acetone/oxygen and acetone/carbon dioxide

Diamond has been deposited on silicon and molybdenum substrates by microwave plasma enhanced chemical vapor deposition technique in acetone/oxygen and acetone/carbon dioxide mixtures. A narrow C/O ratio around 1:1 was found necessary for diamond to be deposited under our deposition conditions. Diamond of good quality was deposited at rates exceeding 25 μ/h. By the use of high power density microwave plasmas, diamond deposition using these two mixtures has been achieved at substrate temperatures up to around 1300°C. A comparison between the diamond deposition process using these two mixtures without additional hydrogen gas and the traditional diamond deposition process using the mixture of methane and hydrogen will be made.