CVD diamond grown by microwave plasma in mixtures of acetone/oxygen and acetone/carbon dioxide

Tsan Heui Chein, Yon-Hua Tzeng

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Diamond has been deposited on silicon and molybdenum substrates by microwave plasma enhanced chemical vapor deposition technique in acetone/oxygen and acetone/carbon dioxide mixtures. A narrow C/O ratio around 1:1 was found necessary for diamond to be deposited under our deposition conditions. Diamond of good quality was deposited at rates exceeding 25 μ/h. By the use of high power density microwave plasmas, diamond deposition using these two mixtures has been achieved at substrate temperatures up to around 1300°C. A comparison between the diamond deposition process using these two mixtures without additional hydrogen gas and the traditional diamond deposition process using the mixture of methane and hydrogen will be made.

Original languageEnglish
Pages (from-to)1393-1401
Number of pages9
JournalDiamond and Related Materials
Volume8
Issue number8-9
Publication statusPublished - 1999 Aug 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

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