Cyclical Annealing Technique to Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors

Hong Chih Chen, Ting Chang Chang, Wei Chih Lai, Guan Fu Chen, Bo Wei Chen, Yu Ju Hung, Kuo Jui Chang, Kai Chung Cheng, Chen Shuo Huang, Kuo Kuang Chen, Hsueh Hsing Lu, Yu Hsin Lin

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Abstract

This study introduces a cyclical annealing technique that enhances the reliability of amorphous indium-gallium-zinc-oxide (a-IGZO) via-type structure thin film transistors (TFTs). By utilizing this treatment, negative gate-bias illumination stress (NBIS)-induced instabilities can be effectively alleviated. The cyclical annealing provides several cooling steps, which are exothermic processes that can form stronger ionic bonds. An additional advantage is that the total annealing time is much shorter than when using conventional long-term annealing. With the use of cyclical annealing, the reliability of the a-IGZO can be effectively optimized, and the shorter process time can increase fabrication efficiency.

Original languageEnglish
Pages (from-to)25866-25870
Number of pages5
JournalACS Applied Materials and Interfaces
Volume10
Issue number31
DOIs
Publication statusPublished - 2018 Aug 8

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Chen, H. C., Chang, T. C., Lai, W. C., Chen, G. F., Chen, B. W., Hung, Y. J., Chang, K. J., Cheng, K. C., Huang, C. S., Chen, K. K., Lu, H. H., & Lin, Y. H. (2018). Cyclical Annealing Technique to Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors. ACS Applied Materials and Interfaces, 10(31), 25866-25870. https://doi.org/10.1021/acsami.7b16307