Cyclical Annealing Technique to Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors

Hong Chih Chen; Ting Chang Chang; Wei Chih Lai; Guan Fu Chen; Bo Wei Chen; Yu Ju Hung; Kuo Jui Chang; Kai Chung Cheng; Chen Shuo Huang; Kuo Kuang Chen; Hsueh Hsing Lu; Yu Hsin Lin

doi:10.1021/acsami.7b16307

Cyclical Annealing Technique to Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors

Hong Chih Chen, Ting Chang Chang, Wei Chih Lai, Guan Fu Chen, Bo Wei Chen, Yu Ju Hung, Kuo Jui Chang, Kai Chung Cheng, Chen Shuo Huang, Kuo Kuang Chen, Hsueh Hsing Lu, Yu Hsin Lin

Department of Photonics

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

This study introduces a cyclical annealing technique that enhances the reliability of amorphous indium-gallium-zinc-oxide (a-IGZO) via-type structure thin film transistors (TFTs). By utilizing this treatment, negative gate-bias illumination stress (NBIS)-induced instabilities can be effectively alleviated. The cyclical annealing provides several cooling steps, which are exothermic processes that can form stronger ionic bonds. An additional advantage is that the total annealing time is much shorter than when using conventional long-term annealing. With the use of cyclical annealing, the reliability of the a-IGZO can be effectively optimized, and the shorter process time can increase fabrication efficiency.

Original language	English
Pages (from-to)	25866-25870
Number of pages	5
Journal	ACS Applied Materials and Interfaces
Volume	10
Issue number	31
DOIs	https://doi.org/10.1021/acsami.7b16307
Publication status	Published - 2018 Aug 8

All Science Journal Classification (ASJC) codes

General Materials Science

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10.1021/acsami.7b16307

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title = "Cyclical Annealing Technique to Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors",

abstract = "This study introduces a cyclical annealing technique that enhances the reliability of amorphous indium-gallium-zinc-oxide (a-IGZO) via-type structure thin film transistors (TFTs). By utilizing this treatment, negative gate-bias illumination stress (NBIS)-induced instabilities can be effectively alleviated. The cyclical annealing provides several cooling steps, which are exothermic processes that can form stronger ionic bonds. An additional advantage is that the total annealing time is much shorter than when using conventional long-term annealing. With the use of cyclical annealing, the reliability of the a-IGZO can be effectively optimized, and the shorter process time can increase fabrication efficiency.",

author = "Chen, {Hong Chih} and Chang, {Ting Chang} and Lai, {Wei Chih} and Chen, {Guan Fu} and Chen, {Bo Wei} and Hung, {Yu Ju} and Chang, {Kuo Jui} and Cheng, {Kai Chung} and Huang, {Chen Shuo} and Chen, {Kuo Kuang} and Lu, {Hsueh Hsing} and Lin, {Yu Hsin}",

note = "Funding Information: This work was performed at the National Science Council Core Facilities Laboratory for Nano-Science and Nano-Technology in the Kaohsiung-Pingtung area, and assisted with by the New Display Process Research Division, AU Optronics Co. and the Display Technology Center of Industrial Technology Research Institute. The authors acknowledge the financial support of the Ministry of Science and Technology, Taiwan (MOST) under Contract No. MOST-103-2112-M-110-011-MY3. Publisher Copyright: {\textcopyright} 2018 American Chemical Society.",

year = "2018",

month = aug,

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doi = "10.1021/acsami.7b16307",

language = "English",

volume = "10",

pages = "25866--25870",

journal = "ACS Applied Materials and Interfaces",

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T1 - Cyclical Annealing Technique to Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors

AU - Chen, Hong Chih

AU - Chang, Ting Chang

AU - Lai, Wei Chih

AU - Chen, Guan Fu

AU - Chen, Bo Wei

AU - Hung, Yu Ju

AU - Chang, Kuo Jui

AU - Cheng, Kai Chung

AU - Huang, Chen Shuo

AU - Chen, Kuo Kuang

AU - Lu, Hsueh Hsing

AU - Lin, Yu Hsin

N1 - Funding Information: This work was performed at the National Science Council Core Facilities Laboratory for Nano-Science and Nano-Technology in the Kaohsiung-Pingtung area, and assisted with by the New Display Process Research Division, AU Optronics Co. and the Display Technology Center of Industrial Technology Research Institute. The authors acknowledge the financial support of the Ministry of Science and Technology, Taiwan (MOST) under Contract No. MOST-103-2112-M-110-011-MY3. Publisher Copyright: © 2018 American Chemical Society.

PY - 2018/8/8

Y1 - 2018/8/8

N2 - This study introduces a cyclical annealing technique that enhances the reliability of amorphous indium-gallium-zinc-oxide (a-IGZO) via-type structure thin film transistors (TFTs). By utilizing this treatment, negative gate-bias illumination stress (NBIS)-induced instabilities can be effectively alleviated. The cyclical annealing provides several cooling steps, which are exothermic processes that can form stronger ionic bonds. An additional advantage is that the total annealing time is much shorter than when using conventional long-term annealing. With the use of cyclical annealing, the reliability of the a-IGZO can be effectively optimized, and the shorter process time can increase fabrication efficiency.

AB - This study introduces a cyclical annealing technique that enhances the reliability of amorphous indium-gallium-zinc-oxide (a-IGZO) via-type structure thin film transistors (TFTs). By utilizing this treatment, negative gate-bias illumination stress (NBIS)-induced instabilities can be effectively alleviated. The cyclical annealing provides several cooling steps, which are exothermic processes that can form stronger ionic bonds. An additional advantage is that the total annealing time is much shorter than when using conventional long-term annealing. With the use of cyclical annealing, the reliability of the a-IGZO can be effectively optimized, and the shorter process time can increase fabrication efficiency.

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JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

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ER -

Cyclical Annealing Technique to Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors

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