Damage and annealing recovery of boron-implanted ultra-shallow junction

The correlation between beam current and surface configuration

Feng Ming Chang, Zong Zhe Wu, Yen Fu Lin, Li Chi Kao, Cheng Ta Wu, Shiu Ko JangJian, Yuan Nian Chen, Kuang-Yao Lo

Research output: Contribution to journalArticle

Abstract

The condition of the beam current in the implantation process is a key issue in the damage rate and structural evolution in the sequent annealing process, especially for ultra-shallow layers. In this work, we develop a compensative optical method combined with UV Raman, X-ray photoelectron spectroscopy (XPS), and X-ray absorption near edge spectroscopy (XANES) to inspect the influence of the beam current in the implantation process. The optima condition of the beam current in the implantation process is determined by higher effective Si-B bond portion in UV Raman spectra and less the peak of B–B bond in XPS spectra which is caused by B cluster defects. Results of XANES indicate that the B oxide layer is formed on the surface of the ultra-shallow junction. The defects in the ultra-shallow junction after annealing are analyzed by novel optical analyses, which cannot be inspected by a traditional thermal wave and resistance measurement. This work exhibits the structural variation of the ultra-shallow junction via a variant beam current and provides a valuable metrology in examining the chemical states and the effective activation in the implantation technology.

Original languageEnglish
Pages (from-to)160-165
Number of pages6
JournalApplied Surface Science
Volume433
DOIs
Publication statusPublished - 2018 Mar 1

Fingerprint

Boron
X ray absorption
X ray photoelectron spectroscopy
Spectroscopy
Annealing
Recovery
Defects
Ion implantation
Oxides
Raman scattering
Chemical activation
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

Chang, Feng Ming ; Wu, Zong Zhe ; Lin, Yen Fu ; Kao, Li Chi ; Wu, Cheng Ta ; JangJian, Shiu Ko ; Chen, Yuan Nian ; Lo, Kuang-Yao. / Damage and annealing recovery of boron-implanted ultra-shallow junction : The correlation between beam current and surface configuration. In: Applied Surface Science. 2018 ; Vol. 433. pp. 160-165.
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Damage and annealing recovery of boron-implanted ultra-shallow junction : The correlation between beam current and surface configuration. / Chang, Feng Ming; Wu, Zong Zhe; Lin, Yen Fu; Kao, Li Chi; Wu, Cheng Ta; JangJian, Shiu Ko; Chen, Yuan Nian; Lo, Kuang-Yao.

In: Applied Surface Science, Vol. 433, 01.03.2018, p. 160-165.

Research output: Contribution to journalArticle

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AU - Chang, Feng Ming

AU - Wu, Zong Zhe

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AU - Kao, Li Chi

AU - Wu, Cheng Ta

AU - JangJian, Shiu Ko

AU - Chen, Yuan Nian

AU - Lo, Kuang-Yao

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