Damage and annealing recovery of boron-implanted ultra-shallow junction: The correlation between beam current and surface configuration

Feng Ming Chang, Zong Zhe Wu, Yen Fu Lin, Li Chi Kao, Cheng Ta Wu, Shiu Ko JangJian, Yuan Nian Chen, Kuang Yao Lo

Research output: Contribution to journalArticle

Abstract

The condition of the beam current in the implantation process is a key issue in the damage rate and structural evolution in the sequent annealing process, especially for ultra-shallow layers. In this work, we develop a compensative optical method combined with UV Raman, X-ray photoelectron spectroscopy (XPS), and X-ray absorption near edge spectroscopy (XANES) to inspect the influence of the beam current in the implantation process. The optima condition of the beam current in the implantation process is determined by higher effective Si-B bond portion in UV Raman spectra and less the peak of B–B bond in XPS spectra which is caused by B cluster defects. Results of XANES indicate that the B oxide layer is formed on the surface of the ultra-shallow junction. The defects in the ultra-shallow junction after annealing are analyzed by novel optical analyses, which cannot be inspected by a traditional thermal wave and resistance measurement. This work exhibits the structural variation of the ultra-shallow junction via a variant beam current and provides a valuable metrology in examining the chemical states and the effective activation in the implantation technology.

Original languageEnglish
Pages (from-to)160-165
Number of pages6
JournalApplied Surface Science
Volume433
DOIs
Publication statusPublished - 2018 Mar 1

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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