DC characteristics improvement of recessed gate GaN-based HFETs grown by MOCVD

A. T. Cheng, Y. K. Su, W. C. Lai, C. H. Huang

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4 Citations (Scopus)


The effect of the recessed gate structure on DC characteristics of n-channel depletion mode heterostructure field effect transistors (HFETs) grown by metalorganic chemical vapor deposition (MOCVD) was demonstrated. The recessed gate process was carried out by using photo-enhanced chemical (PEC) wet etching. There were improvements on the electrical characteristics after using the recessed gate AlGaN/GaN and AlGaN/GaN/InGaN/GaN HFET structures because of the better gate controllability to the drain current. It was also found that the gate voltage, VGS, of the transconductance peak value shifted toward positive bias for the recessed gate structure. The leakage current, the transconductance (Gm) and the saturation current of the recessed gate AlGaN/GaN/InGaN/GaN HFET with a 30-nm-thick Si-doped GaN cap layer are 1.95 mA/mm, 94.82 mA/mm and 230 mA/mm, respectively. This performance is quite better than that of the device with no recessed gate structure.

Original languageEnglish
Pages (from-to)848-851
Number of pages4
JournalJournal of Crystal Growth
Issue numberSPEC. ISS
Publication statusPublished - 2007 Jan

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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