DC characterization of an InP-InGaAs tunneling emitter bipolar transistor (TEBT)

Chun Yuan Chen; Shiou Ying Cheng; Wen Hui Chiou; Hung Ming Chuang; Rong Chau Liu; Chih Hung Yen; Jing Yuh Chen; Chin Chuan Cheng; Wen Chau Liu

doi:10.1109/TED.2003.812107

DC characterization of an InP-InGaAs tunneling emitter bipolar transistor (TEBT)

Chun Yuan Chen, Shiou Ying Cheng, Wen Hui Chiou, Hung Ming Chuang, Rong Chau Liu, Chih Hung Yen, Jing Yuh Chen, Chin Chuan Cheng, Wen Chau Liu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The de performances of a novel InP-InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10^-12 to 10^-1 A). A current gain of 3 is obtained even operated at an ultralow collector current of 3.9 × 10^-12 A (1.56 × 10^-7 A/cm²). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5 V, respectively. Furthermore, a very low collector-emitter offset voltage of 40 mV is found. The temperature-dependent dc characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications.

Original language	English
Pages (from-to)	874-879
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	50
Issue number	4
DOIs	https://doi.org/10.1109/TED.2003.812107
Publication status	Published - 2003 Apr

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2003.812107

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@article{7efc72d83a7845adb4afc4a65345dd67,

title = "DC characterization of an InP-InGaAs tunneling emitter bipolar transistor (TEBT)",

abstract = "The de performances of a novel InP-InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10-12 to 10-1 A). A current gain of 3 is obtained even operated at an ultralow collector current of 3.9 × 10-12 A (1.56 × 10-7 A/cm2). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5 V, respectively. Furthermore, a very low collector-emitter offset voltage of 40 mV is found. The temperature-dependent dc characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications.",

author = "Chen, {Chun Yuan} and Cheng, {Shiou Ying} and Chiou, {Wen Hui} and Chuang, {Hung Ming} and Liu, {Rong Chau} and Yen, {Chih Hung} and Chen, {Jing Yuh} and Cheng, {Chin Chuan} and Liu, {Wen Chau}",

note = "Funding Information: Manuscript received July 25, 2002; revised November 15, 2002. This work was supported in part by the National Science Council of the R.O.C., under Contract NSC 90-2215-E006-021. The review of this paper was arranged by Editor M. Anwar.",

year = "2003",

month = apr,

doi = "10.1109/TED.2003.812107",

language = "English",

volume = "50",

pages = "874--879",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

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TY - JOUR

T1 - DC characterization of an InP-InGaAs tunneling emitter bipolar transistor (TEBT)

AU - Chen, Chun Yuan

AU - Cheng, Shiou Ying

AU - Chiou, Wen Hui

AU - Chuang, Hung Ming

AU - Liu, Rong Chau

AU - Yen, Chih Hung

AU - Chen, Jing Yuh

AU - Cheng, Chin Chuan

AU - Liu, Wen Chau

N1 - Funding Information: Manuscript received July 25, 2002; revised November 15, 2002. This work was supported in part by the National Science Council of the R.O.C., under Contract NSC 90-2215-E006-021. The review of this paper was arranged by Editor M. Anwar.

PY - 2003/4

Y1 - 2003/4

N2 - The de performances of a novel InP-InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10-12 to 10-1 A). A current gain of 3 is obtained even operated at an ultralow collector current of 3.9 × 10-12 A (1.56 × 10-7 A/cm2). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5 V, respectively. Furthermore, a very low collector-emitter offset voltage of 40 mV is found. The temperature-dependent dc characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications.

AB - The de performances of a novel InP-InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10-12 to 10-1 A). A current gain of 3 is obtained even operated at an ultralow collector current of 3.9 × 10-12 A (1.56 × 10-7 A/cm2). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5 V, respectively. Furthermore, a very low collector-emitter offset voltage of 40 mV is found. The temperature-dependent dc characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications.

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DO - 10.1109/TED.2003.812107

M3 - Article

AN - SCOPUS:0037818504

SN - 0018-9383

VL - 50

SP - 874

EP - 879

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 4

ER -

DC characterization of an InP-InGaAs tunneling emitter bipolar transistor (TEBT)

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