DC characterization of an InP-InGaAs tunneling emitter bipolar transistor (TEBT)

Chun Yuan Chen, Shiou Ying Cheng, Wen Hui Chiou, Hung Ming Chuang, Rong Chau Liu, Chih Hung Yen, Jing Yuh Chen, Chin Chuan Cheng, Wen Chau Liu

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11 Citations (Scopus)


The de performances of a novel InP-InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10-12 to 10-1 A). A current gain of 3 is obtained even operated at an ultralow collector current of 3.9 × 10-12 A (1.56 × 10-7 A/cm2). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5 V, respectively. Furthermore, a very low collector-emitter offset voltage of 40 mV is found. The temperature-dependent dc characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications.

Original languageEnglish
Pages (from-to)874-879
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number4
Publication statusPublished - 2003 Apr

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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