DC characterization of an InP/InGaAs tunneling emitter bipolar transistor (TEBT)

Chun Yuan Chen; Shiou Ying Cheng; Hung Ming Chuang; Jing Yuh Chen; Ssu I. Fu; Ching Hsiu Tsai; Chi Yuan Chang; Ching Wen Hung; Chun Wei Chen; Wen Chau Liu

doi:10.1117/12.522232

DC characterization of an InP/InGaAs tunneling emitter bipolar transistor (TEBT)

Chun Yuan Chen, Shiou Ying Cheng, Hung Ming Chuang, Jing Yuh Chen, Ssu I. Fu, Ching Hsiu Tsai, Chi Yuan Chang, Ching Wen Hung, Chun Wei Chen, Wen Chau Liu

Institute of Microelectronics

Research output: Contribution to journal › Conference article › peer-review

Abstract

The DC performances of a novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10^-12 to 10^-1A). A current gain of 3 is obtained even operated at an ultra-low collector current of 3.9×10 ^-12A (1.56×10^-7A/cm²). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5V, respectively. Furthermore, a very low collector-emitter offset voltage of 40mV is found. The temperature-dependent DC characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications.

Original language	English
Pages (from-to)	425-432
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5274
DOIs	https://doi.org/10.1117/12.522232
Publication status	Published - 2004
Event	Microelectronics: Design, Technology and Packaging - Perth, WA, Australia Duration: 2003 Dec 10 → 2003 Dec 12

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.522232

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@article{d45a555b3abb44609523a0487e551555,

title = "DC characterization of an InP/InGaAs tunneling emitter bipolar transistor (TEBT)",

abstract = "The DC performances of a novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10-12 to 10-1A). A current gain of 3 is obtained even operated at an ultra-low collector current of 3.9×10 -12A (1.56×10-7A/cm2). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5V, respectively. Furthermore, a very low collector-emitter offset voltage of 40mV is found. The temperature-dependent DC characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications.",

author = "Chen, {Chun Yuan} and Cheng, {Shiou Ying} and Chuang, {Hung Ming} and Chen, {Jing Yuh} and Fu, {Ssu I.} and Tsai, {Ching Hsiu} and Chang, {Chi Yuan} and Hung, {Ching Wen} and Chen, {Chun Wei} and Liu, {Wen Chau}",

year = "2004",

doi = "10.1117/12.522232",

language = "English",

volume = "5274",

pages = "425--432",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Microelectronics: Design, Technology and Packaging ; Conference date: 10-12-2003 Through 12-12-2003",

}

TY - JOUR

T1 - DC characterization of an InP/InGaAs tunneling emitter bipolar transistor (TEBT)

AU - Chen, Chun Yuan

AU - Cheng, Shiou Ying

AU - Chuang, Hung Ming

AU - Chen, Jing Yuh

AU - Fu, Ssu I.

AU - Tsai, Ching Hsiu

AU - Chang, Chi Yuan

AU - Hung, Ching Wen

AU - Chen, Chun Wei

AU - Liu, Wen Chau

PY - 2004

Y1 - 2004

N2 - The DC performances of a novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10-12 to 10-1A). A current gain of 3 is obtained even operated at an ultra-low collector current of 3.9×10 -12A (1.56×10-7A/cm2). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5V, respectively. Furthermore, a very low collector-emitter offset voltage of 40mV is found. The temperature-dependent DC characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications.

AB - The DC performances of a novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10-12 to 10-1A). A current gain of 3 is obtained even operated at an ultra-low collector current of 3.9×10 -12A (1.56×10-7A/cm2). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5V, respectively. Furthermore, a very low collector-emitter offset voltage of 40mV is found. The temperature-dependent DC characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications.

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U2 - 10.1117/12.522232

DO - 10.1117/12.522232

M3 - Conference article

AN - SCOPUS:2442555880

SN - 0277-786X

VL - 5274

SP - 425

EP - 432

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Microelectronics: Design, Technology and Packaging

Y2 - 10 December 2003 through 12 December 2003

ER -

DC characterization of an InP/InGaAs tunneling emitter bipolar transistor (TEBT)

Abstract

All Science Journal Classification (ASJC) codes

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