DC characterization of an InP/InGaAs tunneling emitter bipolar transistor (TEBT)

Chun Yuan Chen, Shiou Ying Cheng, Hung Ming Chuang, Jing Yuh Chen, Ssu I. Fu, Ching Hsiu Tsai, Chi Yuan Chang, Ching Wen Hung, Chun Wei Chen, Wen-Chau Liu

Research output: Contribution to journalConference article

Abstract

The DC performances of a novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10 -12 to 10 -1 A). A current gain of 3 is obtained even operated at an ultra-low collector current of 3.9×10 -12 A (1.56×10 -7 A/cm 2 ). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5V, respectively. Furthermore, a very low collector-emitter offset voltage of 40mV is found. The temperature-dependent DC characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications.

Original languageEnglish
Pages (from-to)425-432
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5274
DOIs
Publication statusPublished - 2004 Jun 1
EventMicroelectronics: Design, Technology and Packaging - Perth, WA, Australia
Duration: 2003 Dec 102003 Dec 12

Fingerprint

InGaAs
Bipolar transistors
bipolar transistors
emitters
direct current
Low power electronics
accumulators
Electric breakdown
Voltage
Power Electronics
Breakdown
Electric potential
electrical faults
Dependent
Experimental Results
Temperature
electric potential
electronics
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Chen, Chun Yuan ; Cheng, Shiou Ying ; Chuang, Hung Ming ; Chen, Jing Yuh ; Fu, Ssu I. ; Tsai, Ching Hsiu ; Chang, Chi Yuan ; Hung, Ching Wen ; Chen, Chun Wei ; Liu, Wen-Chau. / DC characterization of an InP/InGaAs tunneling emitter bipolar transistor (TEBT). In: Proceedings of SPIE - The International Society for Optical Engineering. 2004 ; Vol. 5274. pp. 425-432.
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abstract = "The DC performances of a novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10 -12 to 10 -1 A). A current gain of 3 is obtained even operated at an ultra-low collector current of 3.9×10 -12 A (1.56×10 -7 A/cm 2 ). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5V, respectively. Furthermore, a very low collector-emitter offset voltage of 40mV is found. The temperature-dependent DC characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications.",
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DC characterization of an InP/InGaAs tunneling emitter bipolar transistor (TEBT). / Chen, Chun Yuan; Cheng, Shiou Ying; Chuang, Hung Ming; Chen, Jing Yuh; Fu, Ssu I.; Tsai, Ching Hsiu; Chang, Chi Yuan; Hung, Ching Wen; Chen, Chun Wei; Liu, Wen-Chau.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 5274, 01.06.2004, p. 425-432.

Research output: Contribution to journalConference article

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T1 - DC characterization of an InP/InGaAs tunneling emitter bipolar transistor (TEBT)

AU - Chen, Chun Yuan

AU - Cheng, Shiou Ying

AU - Chuang, Hung Ming

AU - Chen, Jing Yuh

AU - Fu, Ssu I.

AU - Tsai, Ching Hsiu

AU - Chang, Chi Yuan

AU - Hung, Ching Wen

AU - Chen, Chun Wei

AU - Liu, Wen-Chau

PY - 2004/6/1

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N2 - The DC performances of a novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10 -12 to 10 -1 A). A current gain of 3 is obtained even operated at an ultra-low collector current of 3.9×10 -12 A (1.56×10 -7 A/cm 2 ). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5V, respectively. Furthermore, a very low collector-emitter offset voltage of 40mV is found. The temperature-dependent DC characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications.

AB - The DC performances of a novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10 -12 to 10 -1 A). A current gain of 3 is obtained even operated at an ultra-low collector current of 3.9×10 -12 A (1.56×10 -7 A/cm 2 ). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5V, respectively. Furthermore, a very low collector-emitter offset voltage of 40mV is found. The temperature-dependent DC characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications.

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