DC characterization of an InP/InGaAs tunneling emitter bipolar transistor (TEBT)

Chun Yuan Chen, Shiou Ying Cheng, Hung Ming Chuang, Jing Yuh Chen, Ssu I. Fu, Ching Hsiu Tsai, Chi Yuan Chang, Ching Wen Hung, Chun Wei Chen, Wen Chau Liu

Research output: Contribution to journalConference articlepeer-review

Abstract

The DC performances of a novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10-12 to 10-1A). A current gain of 3 is obtained even operated at an ultra-low collector current of 3.9×10 -12A (1.56×10-7A/cm2). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5V, respectively. Furthermore, a very low collector-emitter offset voltage of 40mV is found. The temperature-dependent DC characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications.

Original languageEnglish
Pages (from-to)425-432
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5274
DOIs
Publication statusPublished - 2004 Jun 1
EventMicroelectronics: Design, Technology and Packaging - Perth, WA, Australia
Duration: 2003 Dec 102003 Dec 12

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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