DC characterization of an InP/InGaAs tunneling emitter bipolar transistor (TEBT)

Chun Yuan Chen; Shiou Ying Cheng; Hung Ming Chuang; Jing Yuh Chen; Ssu I. Fu; Ching Hsiu Tsai; Chi Yuan Chang; Ching Wen Hung; Chun Wei Chen; Wen Chau Liu

doi:10.1117/12.522232

DC characterization of an InP/InGaAs tunneling emitter bipolar transistor (TEBT)

Chun Yuan Chen
, Shiou Ying Cheng
, Hung Ming Chuang
, Jing Yuh Chen
, Ssu I. Fu
, Ching Hsiu Tsai
, Chi Yuan Chang
, Ching Wen Hung
, Chun Wei Chen
, Wen Chau Liu

Institute of Microelectronics

Research output: Contribution to journal › Conference article › peer-review

Abstract

The DC performances of a novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10^-12 to 10^-1A). A current gain of 3 is obtained even operated at an ultra-low collector current of 3.9×10 ^-12A (1.56×10^-7A/cm²). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5V, respectively. Furthermore, a very low collector-emitter offset voltage of 40mV is found. The temperature-dependent DC characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications.

Original language	English
Pages (from-to)	425-432
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5274
DOIs	https://doi.org/10.1117/12.522232
Publication status	Published - 2004
Event	Microelectronics: Design, Technology and Packaging - Perth, WA, Australia Duration: 2003 Dec 10 → 2003 Dec 12

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.522232

Cite this

@article{d45a555b3abb44609523a0487e551555,

title = "DC characterization of an InP/InGaAs tunneling emitter bipolar transistor (TEBT)",

abstract = "The DC performances of a novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10-12 to 10-1A). A current gain of 3 is obtained even operated at an ultra-low collector current of 3.9×10 -12A (1.56×10-7A/cm2). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5V, respectively. Furthermore, a very low collector-emitter offset voltage of 40mV is found. The temperature-dependent DC characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications.",

author = "Chen, \{Chun Yuan\} and Cheng, \{Shiou Ying\} and Chuang, \{Hung Ming\} and Chen, \{Jing Yuh\} and Fu, \{Ssu I.\} and Tsai, \{Ching Hsiu\} and Chang, \{Chi Yuan\} and Hung, \{Ching Wen\} and Chen, \{Chun Wei\} and Liu, \{Wen Chau\}",

year = "2004",

doi = "10.1117/12.522232",

language = "English",

volume = "5274",

pages = "425--432",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Microelectronics: Design, Technology and Packaging ; Conference date: 10-12-2003 Through 12-12-2003",

}

TY - JOUR

T1 - DC characterization of an InP/InGaAs tunneling emitter bipolar transistor (TEBT)

AU - Chen, Chun Yuan

AU - Cheng, Shiou Ying

AU - Chuang, Hung Ming

AU - Chen, Jing Yuh

AU - Fu, Ssu I.

AU - Tsai, Ching Hsiu

AU - Chang, Chi Yuan

AU - Hung, Ching Wen

AU - Chen, Chun Wei

AU - Liu, Wen Chau

PY - 2004

Y1 - 2004

N2 - The DC performances of a novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10-12 to 10-1A). A current gain of 3 is obtained even operated at an ultra-low collector current of 3.9×10 -12A (1.56×10-7A/cm2). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5V, respectively. Furthermore, a very low collector-emitter offset voltage of 40mV is found. The temperature-dependent DC characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications.

AB - The DC performances of a novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10-12 to 10-1A). A current gain of 3 is obtained even operated at an ultra-low collector current of 3.9×10 -12A (1.56×10-7A/cm2). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5V, respectively. Furthermore, a very low collector-emitter offset voltage of 40mV is found. The temperature-dependent DC characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications.

UR - https://www.scopus.com/pages/publications/2442555880

UR - https://www.scopus.com/pages/publications/2442555880#tab=citedBy

U2 - 10.1117/12.522232

DO - 10.1117/12.522232

M3 - Conference article

AN - SCOPUS:2442555880

SN - 0277-786X

VL - 5274

SP - 425

EP - 432

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Microelectronics: Design, Technology and Packaging

Y2 - 10 December 2003 through 12 December 2003

ER -

DC characterization of an InP/InGaAs tunneling emitter bipolar transistor (TEBT)

Abstract

All Science Journal Classification (ASJC) codes

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