DC characterization of InP/InGaAs tunneling emitter bipolar transistor

Shiou Ying Cheng; Chun Yuan Chen; F. U. Ssu-I; Po Hsien Lai; Yan Ying Tsai; Wen Chau Liu

doi:10.1143/JJAP.44.824

DC characterization of InP/InGaAs tunneling emitter bipolar transistor

Shiou Ying Cheng, Chun Yuan Chen, F. U. Ssu-I, Po Hsien Lai, Yan Ying Tsai, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

An InP/InGaAs tunneling emitter bipolar transistor (TEBT) is studied and demonstrated. From the simulation results, the band diagram, tunneling transmission, and carrier distribution of the device are analyzed as functions of barrier thickness. The higher the emitter injection efficiency, the higher the current gain and the larger the current drivability for the device studied by employing a tunneling barrier layer of suitable thickness. In addition, experimentally, InP/InGaAs TEBT has been fabricated successfully. Due to its excellent tunneling barrier structure, the studied device can be operated under an extremely wide collector current range. The operation range is larger than 11 decades of collector current (10^-12 to 10^-1 A). Moreover, the studied device exhibits a very small collector-emitter offset voltage (ΔV_CE) of 40 mV and an extremely wide operation range of output current. Thus, the studied device is suitable for low-voltage and low-power circuit applications.

Original language	English
Pages (from-to)	824-827
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	44
Issue number	2
DOIs	https://doi.org/10.1143/JJAP.44.824
Publication status	Published - 2005 Feb 1

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.44.824

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title = "DC characterization of InP/InGaAs tunneling emitter bipolar transistor",

abstract = "An InP/InGaAs tunneling emitter bipolar transistor (TEBT) is studied and demonstrated. From the simulation results, the band diagram, tunneling transmission, and carrier distribution of the device are analyzed as functions of barrier thickness. The higher the emitter injection efficiency, the higher the current gain and the larger the current drivability for the device studied by employing a tunneling barrier layer of suitable thickness. In addition, experimentally, InP/InGaAs TEBT has been fabricated successfully. Due to its excellent tunneling barrier structure, the studied device can be operated under an extremely wide collector current range. The operation range is larger than 11 decades of collector current (10-12 to 10-1 A). Moreover, the studied device exhibits a very small collector-emitter offset voltage (ΔVCE) of 40 mV and an extremely wide operation range of output current. Thus, the studied device is suitable for low-voltage and low-power circuit applications.",

author = "Cheng, {Shiou Ying} and Chen, {Chun Yuan} and Ssu-I, {F. U.} and Lai, {Po Hsien} and Tsai, {Yan Ying} and Liu, {Wen Chau}",

year = "2005",

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doi = "10.1143/JJAP.44.824",

language = "English",

volume = "44",

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journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

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}

DC characterization of InP/InGaAs tunneling emitter bipolar transistor. / Cheng, Shiou Ying; Chen, Chun Yuan; Ssu-I, F. U.; Lai, Po Hsien; Tsai, Yan Ying; Liu, Wen Chau.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 2, 01.02.2005, p. 824-827.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - DC characterization of InP/InGaAs tunneling emitter bipolar transistor

AU - Cheng, Shiou Ying

AU - Chen, Chun Yuan

AU - Ssu-I, F. U.

AU - Lai, Po Hsien

AU - Tsai, Yan Ying

AU - Liu, Wen Chau

PY - 2005/2/1

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N2 - An InP/InGaAs tunneling emitter bipolar transistor (TEBT) is studied and demonstrated. From the simulation results, the band diagram, tunneling transmission, and carrier distribution of the device are analyzed as functions of barrier thickness. The higher the emitter injection efficiency, the higher the current gain and the larger the current drivability for the device studied by employing a tunneling barrier layer of suitable thickness. In addition, experimentally, InP/InGaAs TEBT has been fabricated successfully. Due to its excellent tunneling barrier structure, the studied device can be operated under an extremely wide collector current range. The operation range is larger than 11 decades of collector current (10-12 to 10-1 A). Moreover, the studied device exhibits a very small collector-emitter offset voltage (ΔVCE) of 40 mV and an extremely wide operation range of output current. Thus, the studied device is suitable for low-voltage and low-power circuit applications.

AB - An InP/InGaAs tunneling emitter bipolar transistor (TEBT) is studied and demonstrated. From the simulation results, the band diagram, tunneling transmission, and carrier distribution of the device are analyzed as functions of barrier thickness. The higher the emitter injection efficiency, the higher the current gain and the larger the current drivability for the device studied by employing a tunneling barrier layer of suitable thickness. In addition, experimentally, InP/InGaAs TEBT has been fabricated successfully. Due to its excellent tunneling barrier structure, the studied device can be operated under an extremely wide collector current range. The operation range is larger than 11 decades of collector current (10-12 to 10-1 A). Moreover, the studied device exhibits a very small collector-emitter offset voltage (ΔVCE) of 40 mV and an extremely wide operation range of output current. Thus, the studied device is suitable for low-voltage and low-power circuit applications.

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DC characterization of InP/InGaAs tunneling emitter bipolar transistor

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