TY - JOUR
T1 - DC characterization of InP/InGaAs tunneling emitter bipolar transistor
AU - Cheng, Shiou Ying
AU - Chen, Chun Yuan
AU - Ssu-I, F. U.
AU - Lai, Po Hsien
AU - Tsai, Yan Ying
AU - Liu, Wen Chau
PY - 2005/2
Y1 - 2005/2
N2 - An InP/InGaAs tunneling emitter bipolar transistor (TEBT) is studied and demonstrated. From the simulation results, the band diagram, tunneling transmission, and carrier distribution of the device are analyzed as functions of barrier thickness. The higher the emitter injection efficiency, the higher the current gain and the larger the current drivability for the device studied by employing a tunneling barrier layer of suitable thickness. In addition, experimentally, InP/InGaAs TEBT has been fabricated successfully. Due to its excellent tunneling barrier structure, the studied device can be operated under an extremely wide collector current range. The operation range is larger than 11 decades of collector current (10-12 to 10-1 A). Moreover, the studied device exhibits a very small collector-emitter offset voltage (ΔVCE) of 40 mV and an extremely wide operation range of output current. Thus, the studied device is suitable for low-voltage and low-power circuit applications.
AB - An InP/InGaAs tunneling emitter bipolar transistor (TEBT) is studied and demonstrated. From the simulation results, the band diagram, tunneling transmission, and carrier distribution of the device are analyzed as functions of barrier thickness. The higher the emitter injection efficiency, the higher the current gain and the larger the current drivability for the device studied by employing a tunneling barrier layer of suitable thickness. In addition, experimentally, InP/InGaAs TEBT has been fabricated successfully. Due to its excellent tunneling barrier structure, the studied device can be operated under an extremely wide collector current range. The operation range is larger than 11 decades of collector current (10-12 to 10-1 A). Moreover, the studied device exhibits a very small collector-emitter offset voltage (ΔVCE) of 40 mV and an extremely wide operation range of output current. Thus, the studied device is suitable for low-voltage and low-power circuit applications.
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U2 - 10.1143/JJAP.44.824
DO - 10.1143/JJAP.44.824
M3 - Article
AN - SCOPUS:17444382022
SN - 0021-4922
VL - 44
SP - 824
EP - 827
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 2
ER -