Deep level defect in Si-implanted GaN n+-p junction

X. D. Chen; Y. Huang; S. Fung; C. D. Beling; C. C. Ling; J. K. Sheu; M. L. Lee; G. C. Chi; S. J. Chang

doi:10.1063/1.1578167

Deep level defect in Si-implanted GaN n⁺-p junction

X. D. Chen, Y. Huang, S. Fung, C. D. Beling, C. C. Ling, J. K. Sheu, M. L. Lee, G. C. Chi, S. J. Chang

Research output: Contribution to journal › Article

17 Citations (Scopus)

Abstract

The results of deep level transient spectroscopy (DLTS) experiments on GaN junctions, fabricated by silicon implantation, were discussed. An unusual appearance of a minority peak in the majority carrier DLTS spectra within the interfacial region of the junctions was observed. The presence of this minority peak suggested a high concentration of a deep level defect within the interfacial region.

Original language	English
Pages (from-to)	3671-3673
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	21
DOIs	https://doi.org/10.1063/1.1578167
Publication status	Published - 2003 May 26

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All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Cite this

Chen, X. D., Huang, Y., Fung, S., Beling, C. D., Ling, C. C., Sheu, J. K., Lee, M. L., Chi, G. C., & Chang, S. J. (2003). Deep level defect in Si-implanted GaN n⁺-p junction. Applied Physics Letters, 82(21), 3671-3673. https://doi.org/10.1063/1.1578167

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abstract = "The results of deep level transient spectroscopy (DLTS) experiments on GaN junctions, fabricated by silicon implantation, were discussed. An unusual appearance of a minority peak in the majority carrier DLTS spectra within the interfacial region of the junctions was observed. The presence of this minority peak suggested a high concentration of a deep level defect within the interfacial region.",

author = "Chen, {X. D.} and Y. Huang and S. Fung and Beling, {C. D.} and Ling, {C. C.} and Sheu, {J. K.} and Lee, {M. L.} and Chi, {G. C.} and Chang, {S. J.}",

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AU - Chen, X. D.

AU - Huang, Y.

AU - Fung, S.

AU - Beling, C. D.

AU - Ling, C. C.

AU - Sheu, J. K.

AU - Lee, M. L.

AU - Chi, G. C.

AU - Chang, S. J.

PY - 2003/5/26

Y1 - 2003/5/26

N2 - The results of deep level transient spectroscopy (DLTS) experiments on GaN junctions, fabricated by silicon implantation, were discussed. An unusual appearance of a minority peak in the majority carrier DLTS spectra within the interfacial region of the junctions was observed. The presence of this minority peak suggested a high concentration of a deep level defect within the interfacial region.

AB - The results of deep level transient spectroscopy (DLTS) experiments on GaN junctions, fabricated by silicon implantation, were discussed. An unusual appearance of a minority peak in the majority carrier DLTS spectra within the interfacial region of the junctions was observed. The presence of this minority peak suggested a high concentration of a deep level defect within the interfacial region.

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10.1063/1.1578167