Deep level defect in Si-implanted GaN n+-p junction

X. D. Chen; Y. Huang; S. Fung; C. D. Beling; C. C. Ling; J. K. Sheu; M. L. Lee; G. C. Chi; S. J. Chang

doi:10.1063/1.1578167

Deep level defect in Si-implanted GaN n⁺-p junction

X. D. Chen, Y. Huang, S. Fung, C. D. Beling, C. C. Ling, J. K. Sheu, M. L. Lee, G. C. Chi, S. J. Chang

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22 Citations (Scopus)

Abstract

The results of deep level transient spectroscopy (DLTS) experiments on GaN junctions, fabricated by silicon implantation, were discussed. An unusual appearance of a minority peak in the majority carrier DLTS spectra within the interfacial region of the junctions was observed. The presence of this minority peak suggested a high concentration of a deep level defect within the interfacial region.

Original language	English
Pages (from-to)	3671-3673
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	21
DOIs	https://doi.org/10.1063/1.1578167
Publication status	Published - 2003 May 26

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "Deep level defect in Si-implanted GaN n+-p junction",

abstract = "The results of deep level transient spectroscopy (DLTS) experiments on GaN junctions, fabricated by silicon implantation, were discussed. An unusual appearance of a minority peak in the majority carrier DLTS spectra within the interfacial region of the junctions was observed. The presence of this minority peak suggested a high concentration of a deep level defect within the interfacial region.",

author = "Chen, {X. D.} and Y. Huang and S. Fung and Beling, {C. D.} and Ling, {C. C.} and Sheu, {J. K.} and Lee, {M. L.} and Chi, {G. C.} and Chang, {S. J.}",

year = "2003",

month = may,

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language = "English",

volume = "82",

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journal = "Applied Physics Letters",

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TY - JOUR

T1 - Deep level defect in Si-implanted GaN n+-p junction

AU - Chen, X. D.

AU - Huang, Y.

AU - Fung, S.

AU - Beling, C. D.

AU - Ling, C. C.

AU - Sheu, J. K.

AU - Lee, M. L.

AU - Chi, G. C.

AU - Chang, S. J.

PY - 2003/5/26

Y1 - 2003/5/26

N2 - The results of deep level transient spectroscopy (DLTS) experiments on GaN junctions, fabricated by silicon implantation, were discussed. An unusual appearance of a minority peak in the majority carrier DLTS spectra within the interfacial region of the junctions was observed. The presence of this minority peak suggested a high concentration of a deep level defect within the interfacial region.

AB - The results of deep level transient spectroscopy (DLTS) experiments on GaN junctions, fabricated by silicon implantation, were discussed. An unusual appearance of a minority peak in the majority carrier DLTS spectra within the interfacial region of the junctions was observed. The presence of this minority peak suggested a high concentration of a deep level defect within the interfacial region.

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U2 - 10.1063/1.1578167

DO - 10.1063/1.1578167

M3 - Article

AN - SCOPUS:0038306938

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VL - 82

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EP - 3673

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Deep level defect in Si-implanted GaN n⁺-p junction

Abstract

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