Deep level defect in Si-implanted GaN n+-p junction

X. D. Chen, Y. Huang, S. Fung, C. D. Beling, C. C. Ling, J. K. Sheu, M. L. Lee, G. C. Chi, S. J. Chang

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The results of deep level transient spectroscopy (DLTS) experiments on GaN junctions, fabricated by silicon implantation, were discussed. An unusual appearance of a minority peak in the majority carrier DLTS spectra within the interfacial region of the junctions was observed. The presence of this minority peak suggested a high concentration of a deep level defect within the interfacial region.

Original languageEnglish
Pages (from-to)3671-3673
Number of pages3
JournalApplied Physics Letters
Issue number21
Publication statusPublished - 2003 May 26


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Chen, X. D., Huang, Y., Fung, S., Beling, C. D., Ling, C. C., Sheu, J. K., Lee, M. L., Chi, G. C., & Chang, S. J. (2003). Deep level defect in Si-implanted GaN n+-p junction. Applied Physics Letters, 82(21), 3671-3673.