Abstract
The results of deep level transient spectroscopy (DLTS) experiments on GaN junctions, fabricated by silicon implantation, were discussed. An unusual appearance of a minority peak in the majority carrier DLTS spectra within the interfacial region of the junctions was observed. The presence of this minority peak suggested a high concentration of a deep level defect within the interfacial region.
Original language | English |
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Pages (from-to) | 3671-3673 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 82 |
Issue number | 21 |
DOIs | |
Publication status | Published - 2003 May 26 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)