Deep level defect in Si-implanted GaN n+-p junction

X. D. Chen, Y. Huang, S. Fung, C. D. Beling, C. C. Ling, J. K. Sheu, M. L. Lee, G. C. Chi, S. J. Chang

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


The results of deep level transient spectroscopy (DLTS) experiments on GaN junctions, fabricated by silicon implantation, were discussed. An unusual appearance of a minority peak in the majority carrier DLTS spectra within the interfacial region of the junctions was observed. The presence of this minority peak suggested a high concentration of a deep level defect within the interfacial region.

Original languageEnglish
Pages (from-to)3671-3673
Number of pages3
JournalApplied Physics Letters
Issue number21
Publication statusPublished - 2003 May 26

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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