Deep-level defects in AlGaN/GaN heterostructures grown using rf-plasma-assisted molecular beam epitaxy

Chan Jin Park; Young Shin Park; Ho Sang Lee; Im Taek Yoon; Tae Won Kang; Hoon Young Cho; Jae Eung Oh; Kang L. Wang

doi:10.1143/JJAP.44.1722

Deep-level defects in AlGaN/GaN heterostructures grown using rf-plasma-assisted molecular beam epitaxy

Chan Jin Park, Young Shin Park, Ho Sang Lee, Im Taek Yoon, Tae Won Kang, Hoon Young Cho, Jae Eung Oh, Kang L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Gallium nitride heterostructures sandwiched between AlGaN layers have been grown on sapphire substrates using rf-plasma-assisted molecular-beam epitaxy (MBE), and their electrical properties investigated. Deep-level transient spectroscopy (DLTS) measurements reveal that the activation energies of the two electron levels were 0.21 eV and 0.23 eV relative to the conduction band, with capture cross sections of 5.0 × 10^-15 cm² and 7.4 × 10^-17 cm², respectively. From the capture kinetics of the deep-level defects, according to the filling pulse duration and the bias voltage, it is suggested that the 0.21 eV defect is associated with nitrogen vacancies and the 0.23 eV defect is associated with extended defects.

Original language	English
Pages (from-to)	1722-1725
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	44
Issue number	4 A
DOIs	https://doi.org/10.1143/JJAP.44.1722
Publication status	Published - 2005 Apr

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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title = "Deep-level defects in AlGaN/GaN heterostructures grown using rf-plasma-assisted molecular beam epitaxy",

abstract = "Gallium nitride heterostructures sandwiched between AlGaN layers have been grown on sapphire substrates using rf-plasma-assisted molecular-beam epitaxy (MBE), and their electrical properties investigated. Deep-level transient spectroscopy (DLTS) measurements reveal that the activation energies of the two electron levels were 0.21 eV and 0.23 eV relative to the conduction band, with capture cross sections of 5.0 × 10-15 cm2 and 7.4 × 10-17 cm2, respectively. From the capture kinetics of the deep-level defects, according to the filling pulse duration and the bias voltage, it is suggested that the 0.21 eV defect is associated with nitrogen vacancies and the 0.23 eV defect is associated with extended defects.",

author = "Park, {Chan Jin} and Park, {Young Shin} and Lee, {Ho Sang} and Yoon, {Im Taek} and Kang, {Tae Won} and Cho, {Hoon Young} and Oh, {Jae Eung} and Wang, {Kang L.}",

year = "2005",

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doi = "10.1143/JJAP.44.1722",

language = "English",

volume = "44",

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journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

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TY - JOUR

T1 - Deep-level defects in AlGaN/GaN heterostructures grown using rf-plasma-assisted molecular beam epitaxy

AU - Park, Chan Jin

AU - Park, Young Shin

AU - Lee, Ho Sang

AU - Yoon, Im Taek

AU - Kang, Tae Won

AU - Cho, Hoon Young

AU - Oh, Jae Eung

AU - Wang, Kang L.

PY - 2005/4

Y1 - 2005/4

N2 - Gallium nitride heterostructures sandwiched between AlGaN layers have been grown on sapphire substrates using rf-plasma-assisted molecular-beam epitaxy (MBE), and their electrical properties investigated. Deep-level transient spectroscopy (DLTS) measurements reveal that the activation energies of the two electron levels were 0.21 eV and 0.23 eV relative to the conduction band, with capture cross sections of 5.0 × 10-15 cm2 and 7.4 × 10-17 cm2, respectively. From the capture kinetics of the deep-level defects, according to the filling pulse duration and the bias voltage, it is suggested that the 0.21 eV defect is associated with nitrogen vacancies and the 0.23 eV defect is associated with extended defects.

AB - Gallium nitride heterostructures sandwiched between AlGaN layers have been grown on sapphire substrates using rf-plasma-assisted molecular-beam epitaxy (MBE), and their electrical properties investigated. Deep-level transient spectroscopy (DLTS) measurements reveal that the activation energies of the two electron levels were 0.21 eV and 0.23 eV relative to the conduction band, with capture cross sections of 5.0 × 10-15 cm2 and 7.4 × 10-17 cm2, respectively. From the capture kinetics of the deep-level defects, according to the filling pulse duration and the bias voltage, it is suggested that the 0.21 eV defect is associated with nitrogen vacancies and the 0.23 eV defect is associated with extended defects.

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 4 A

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Deep-level defects in AlGaN/GaN heterostructures grown using rf-plasma-assisted molecular beam epitaxy

Abstract

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