Deep-level defects in AlGaN/GaN heterostructures grown using rf-plasma-assisted molecular beam epitaxy

Chan Jin Park, Young Shin Park, Ho Sang Lee, Im Taek Yoon, Tae Won Kang, Hoon Young Cho, Jae Eung Oh, Kang L. Wang

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Gallium nitride heterostructures sandwiched between AlGaN layers have been grown on sapphire substrates using rf-plasma-assisted molecular-beam epitaxy (MBE), and their electrical properties investigated. Deep-level transient spectroscopy (DLTS) measurements reveal that the activation energies of the two electron levels were 0.21 eV and 0.23 eV relative to the conduction band, with capture cross sections of 5.0 × 10-15 cm2 and 7.4 × 10-17 cm2, respectively. From the capture kinetics of the deep-level defects, according to the filling pulse duration and the bias voltage, it is suggested that the 0.21 eV defect is associated with nitrogen vacancies and the 0.23 eV defect is associated with extended defects.

Original languageEnglish
Pages (from-to)1722-1725
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number4 A
DOIs
Publication statusPublished - 2005 Apr

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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