Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers

G. E. Rowlands, T. Rahman, J. A. Katine, J. Langer, A. Lyle, H. Zhao, J. G. Alzate, A. A. Kovalev, Y. Tserkovnyak, Z. M. Zeng, H. W. Jiang, K. Galatsis, Y. M. Huai, P. Khalili Amiri, K. L. Wang, I. N. Krivorotov, J. P. Wang

Research output: Contribution to journalArticlepeer-review

70 Citations (Scopus)

Abstract

We show that adding a perpendicular polarizer to a conventional spin torque memory element with an in-plane free layer and an in-plane polarizer can significantly increase the write speed and decrease the write energy of the element. We demonstrate the operation of such spin torque memory elements with write energies of 0.4 pJ and write times of 0.12 ns.

Original languageEnglish
Article number102509
JournalApplied Physics Letters
Volume98
Issue number10
DOIs
Publication statusPublished - 2011 Mar 7

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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