Deep UV Ta 2O 5/Zinc-indium-tin-oxide thin film photo-transistor

C. J. Chiu; S. S. Shih; Wen Yin Weng; Shoou Jinn Chang; Z. D. Hung; Tsung Ying Tsai

doi:10.1109/LPT.2012.2193564

Deep UV Ta ₂O ₅/Zinc-indium-tin-oxide thin film photo-transistor

C. J. Chiu
, S. S. Shih
, Wen Yin Weng
, Shoou Jinn Chang
, Z. D. Hung
, Tsung Ying Tsai

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

The authors report the fabrication of a deep-ultraviolet sensitive a-ZITO thin-film-transistor (TFT) with a Ta ₂O ₅ gate dielectric. It is found that carrier mobility, threshold voltage, and sub-threshold swing are 106.2 cm ²/Vs, 0.75 V, and 0.45 V/decade, respectively, measured in the dark. It is also found that measured current increased from 2.3×10 ^-9 A to 7.97×10 ^-5 A, as we illuminated the sample with λ = 250-nm UV light when V _G is biased at 0 V. Furthermore, it is found that deep-UV-to-visible rejection ratio could reach 2.3×10 ⁵ for the fabricated Ta ₂O ₅/a-ZITO TFT.

Original language	English
Article number	6179308
Pages (from-to)	1018-1020
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	24
Issue number	12
DOIs	https://doi.org/10.1109/LPT.2012.2193564
Publication status	Published - 2012

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2012.2193564

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@article{cc8be65fb4dd4df6921b3d256e1dee0c,

title = "Deep UV Ta 2O 5/Zinc-indium-tin-oxide thin film photo-transistor",

abstract = "The authors report the fabrication of a deep-ultraviolet sensitive a-ZITO thin-film-transistor (TFT) with a Ta 2O 5 gate dielectric. It is found that carrier mobility, threshold voltage, and sub-threshold swing are 106.2 cm 2/Vs, 0.75 V, and 0.45 V/decade, respectively, measured in the dark. It is also found that measured current increased from 2.3×10 -9 A to 7.97×10 -5 A, as we illuminated the sample with λ = 250-nm UV light when V G is biased at 0 V. Furthermore, it is found that deep-UV-to-visible rejection ratio could reach 2.3×10 5 for the fabricated Ta 2O 5/a-ZITO TFT.",

author = "Chiu, \{C. J.\} and Shih, \{S. S.\} and Weng, \{Wen Yin\} and Chang, \{Shoou Jinn\} and Hung, \{Z. D.\} and Tsai, \{Tsung Ying\}",

note = "Funding Information: Manuscript received February 9, 2012; revised March 5, 2012; accepted March 28, 2012. Date of publication April 5, 2012; date of current version May 9, 2012. This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan, under Grant D97-2700.",

year = "2012",

doi = "10.1109/LPT.2012.2193564",

language = "English",

volume = "24",

pages = "1018--1020",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

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TY - JOUR

T1 - Deep UV Ta 2O 5/Zinc-indium-tin-oxide thin film photo-transistor

AU - Chiu, C. J.

AU - Shih, S. S.

AU - Weng, Wen Yin

AU - Chang, Shoou Jinn

AU - Hung, Z. D.

AU - Tsai, Tsung Ying

N1 - Funding Information: Manuscript received February 9, 2012; revised March 5, 2012; accepted March 28, 2012. Date of publication April 5, 2012; date of current version May 9, 2012. This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan, under Grant D97-2700.

PY - 2012

Y1 - 2012

N2 - The authors report the fabrication of a deep-ultraviolet sensitive a-ZITO thin-film-transistor (TFT) with a Ta 2O 5 gate dielectric. It is found that carrier mobility, threshold voltage, and sub-threshold swing are 106.2 cm 2/Vs, 0.75 V, and 0.45 V/decade, respectively, measured in the dark. It is also found that measured current increased from 2.3×10 -9 A to 7.97×10 -5 A, as we illuminated the sample with λ = 250-nm UV light when V G is biased at 0 V. Furthermore, it is found that deep-UV-to-visible rejection ratio could reach 2.3×10 5 for the fabricated Ta 2O 5/a-ZITO TFT.

AB - The authors report the fabrication of a deep-ultraviolet sensitive a-ZITO thin-film-transistor (TFT) with a Ta 2O 5 gate dielectric. It is found that carrier mobility, threshold voltage, and sub-threshold swing are 106.2 cm 2/Vs, 0.75 V, and 0.45 V/decade, respectively, measured in the dark. It is also found that measured current increased from 2.3×10 -9 A to 7.97×10 -5 A, as we illuminated the sample with λ = 250-nm UV light when V G is biased at 0 V. Furthermore, it is found that deep-UV-to-visible rejection ratio could reach 2.3×10 5 for the fabricated Ta 2O 5/a-ZITO TFT.

UR - https://www.scopus.com/pages/publications/84861139151

UR - https://www.scopus.com/pages/publications/84861139151#tab=citedBy

U2 - 10.1109/LPT.2012.2193564

DO - 10.1109/LPT.2012.2193564

M3 - Article

AN - SCOPUS:84861139151

SN - 1041-1135

VL - 24

SP - 1018

EP - 1020

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 12

M1 - 6179308

ER -

Deep UV Ta ₂O ₅/Zinc-indium-tin-oxide thin film photo-transistor

Abstract

All Science Journal Classification (ASJC) codes

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