Defect characterization by differential capacitance spectroscopy without the Arrhenius plot

A new method of Arrhenius transformation and matching is developed in this study based on the rate-temperature duality of the admittance spectroscopy measurement to extract the activation energy Ea and the attempt-to-escape frequency ν0 of a defect in GaAsN from differential capacitance spectroscopy without the Arrhenius plot and without identifying the fdC/df spectra peaks. The method consists of a set of variations that transform the iso-rate scan and/or the isothermal scan to a virtual space - activation energy, attempt-to-escape frequency, temperature, or rate. The transformed scans must be matched prior to extracting Ea and ν0 local to a fixed point in the two-dimensional temperature-rate experimental space.