Defect characterization by differential capacitance spectroscopy without the Arrhenius plot

Research output: Contribution to journalComment/debatepeer-review

Abstract

A new method of Arrhenius transformation and matching is developed in this study based on the rate-temperature duality of the admittance spectroscopy measurement to extract the activation energy Ea and the attempt-to-escape frequency ν0 of a defect in GaAsN from differential capacitance spectroscopy without the Arrhenius plot and without identifying the fdC/df spectra peaks. The method consists of a set of variations that transform the iso-rate scan and/or the isothermal scan to a virtual space - activation energy, attempt-to-escape frequency, temperature, or rate. The transformed scans must be matched prior to extracting Ea and ν0 local to a fixed point in the two-dimensional temperature-rate experimental space.

Original languageEnglish
Article number043903
JournalReview of Scientific Instruments
Volume92
Issue number4
DOIs
Publication statusPublished - 2021 Apr 1

All Science Journal Classification (ASJC) codes

  • Instrumentation

Fingerprint Dive into the research topics of 'Defect characterization by differential capacitance spectroscopy without the Arrhenius plot'. Together they form a unique fingerprint.

Cite this