Defect distribution near the surface of electron-irradiated silicon

K. L. Wang; Y. H. Lee; J. W. Corbett

doi:10.1063/1.90440

Defect distribution near the surface of electron-irradiated silicon

K. L. Wang
, Y. H. Lee
, J. W. Corbett

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

52 Citations (Scopus)

Abstract

The surface-defect distributions of electron-irradiated n-type silicon has been investigated using a transient capacitance technique. Schottky, p-n junction, and MOS structures were used in profiling the defect distributions. Surface depletions of defects observed were attributed to the vacancy distribution but not that of oxygen and other capture center's distribution. The vacancy diffusion length at 300°K was estimated to be about 3-6 μm.

Original language	English
Pages (from-to)	547-548
Number of pages	2
Journal	Applied Physics Letters
Volume	33
Issue number	6
DOIs	https://doi.org/10.1063/1.90440
Publication status	Published - 1978

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.90440

Cite this

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title = "Defect distribution near the surface of electron-irradiated silicon",

abstract = "The surface-defect distributions of electron-irradiated n-type silicon has been investigated using a transient capacitance technique. Schottky, p-n junction, and MOS structures were used in profiling the defect distributions. Surface depletions of defects observed were attributed to the vacancy distribution but not that of oxygen and other capture center's distribution. The vacancy diffusion length at 300°K was estimated to be about 3-6 μm.",

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year = "1978",

doi = "10.1063/1.90440",

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journal = "Applied Physics Letters",

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AU - Wang, K. L.

AU - Lee, Y. H.

AU - Corbett, J. W.

PY - 1978

Y1 - 1978

N2 - The surface-defect distributions of electron-irradiated n-type silicon has been investigated using a transient capacitance technique. Schottky, p-n junction, and MOS structures were used in profiling the defect distributions. Surface depletions of defects observed were attributed to the vacancy distribution but not that of oxygen and other capture center's distribution. The vacancy diffusion length at 300°K was estimated to be about 3-6 μm.

AB - The surface-defect distributions of electron-irradiated n-type silicon has been investigated using a transient capacitance technique. Schottky, p-n junction, and MOS structures were used in profiling the defect distributions. Surface depletions of defects observed were attributed to the vacancy distribution but not that of oxygen and other capture center's distribution. The vacancy diffusion length at 300°K was estimated to be about 3-6 μm.

UR - https://www.scopus.com/pages/publications/0013459472

UR - https://www.scopus.com/pages/publications/0013459472#tab=citedBy

U2 - 10.1063/1.90440

DO - 10.1063/1.90440

M3 - Article

AN - SCOPUS:0013459472

SN - 0003-6951

VL - 33

SP - 547

EP - 548

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Defect distribution near the surface of electron-irradiated silicon

Abstract

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