Defect-Induced Exchange Bias in a Single SrRuO3 Layer

Changan Wang, Chao Chen, Ching Hao Chang, Hsu Sheng Tsai, Parul Pandey, Chi Xu, Roman Böttger, Deyang Chen, Yu Jia Zeng, Xingsen Gao, Manfred Helm, Shengqiang Zhou

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Exchange bias stems from the interaction between different magnetic phases, and therefore, it generally occurs in magnetic multilayers. Here, we present a large exchange bias in a single SrRuO3 layer induced by helium ion irradiation. When the fluence increases, the induced defects not only suppress the magnetization and the Curie temperature but also drive a metal-insulator transition at a low temperature. In particular, a large exchange bias field up to ∼0.36 T can be created by the irradiation. This large exchange bias is related to the coexistence of different magnetic and structural phases that are introduced by embedded defects. Our work demonstrates that spintronic properties in complex oxides can be created and enhanced by applying ion irradiation.

Original languageEnglish
Pages (from-to)27472-27476
Number of pages5
JournalACS Applied Materials and Interfaces
Volume10
Issue number32
DOIs
Publication statusPublished - 2018 Aug 15

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Ion bombardment
Magnetic multilayers
Magnetoelectronics
Helium
Defects
Metal insulator transition
Curie temperature
Oxides
Magnetization
Irradiation
Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Wang, C., Chen, C., Chang, C. H., Tsai, H. S., Pandey, P., Xu, C., ... Zhou, S. (2018). Defect-Induced Exchange Bias in a Single SrRuO3 Layer. ACS Applied Materials and Interfaces, 10(32), 27472-27476. https://doi.org/10.1021/acsami.8b07918
Wang, Changan ; Chen, Chao ; Chang, Ching Hao ; Tsai, Hsu Sheng ; Pandey, Parul ; Xu, Chi ; Böttger, Roman ; Chen, Deyang ; Zeng, Yu Jia ; Gao, Xingsen ; Helm, Manfred ; Zhou, Shengqiang. / Defect-Induced Exchange Bias in a Single SrRuO3 Layer. In: ACS Applied Materials and Interfaces. 2018 ; Vol. 10, No. 32. pp. 27472-27476.
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Wang, C, Chen, C, Chang, CH, Tsai, HS, Pandey, P, Xu, C, Böttger, R, Chen, D, Zeng, YJ, Gao, X, Helm, M & Zhou, S 2018, 'Defect-Induced Exchange Bias in a Single SrRuO3 Layer', ACS Applied Materials and Interfaces, vol. 10, no. 32, pp. 27472-27476. https://doi.org/10.1021/acsami.8b07918

Defect-Induced Exchange Bias in a Single SrRuO3 Layer. / Wang, Changan; Chen, Chao; Chang, Ching Hao; Tsai, Hsu Sheng; Pandey, Parul; Xu, Chi; Böttger, Roman; Chen, Deyang; Zeng, Yu Jia; Gao, Xingsen; Helm, Manfred; Zhou, Shengqiang.

In: ACS Applied Materials and Interfaces, Vol. 10, No. 32, 15.08.2018, p. 27472-27476.

Research output: Contribution to journalArticle

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AU - Wang, Changan

AU - Chen, Chao

AU - Chang, Ching Hao

AU - Tsai, Hsu Sheng

AU - Pandey, Parul

AU - Xu, Chi

AU - Böttger, Roman

AU - Chen, Deyang

AU - Zeng, Yu Jia

AU - Gao, Xingsen

AU - Helm, Manfred

AU - Zhou, Shengqiang

PY - 2018/8/15

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AB - Exchange bias stems from the interaction between different magnetic phases, and therefore, it generally occurs in magnetic multilayers. Here, we present a large exchange bias in a single SrRuO3 layer induced by helium ion irradiation. When the fluence increases, the induced defects not only suppress the magnetization and the Curie temperature but also drive a metal-insulator transition at a low temperature. In particular, a large exchange bias field up to ∼0.36 T can be created by the irradiation. This large exchange bias is related to the coexistence of different magnetic and structural phases that are introduced by embedded defects. Our work demonstrates that spintronic properties in complex oxides can be created and enhanced by applying ion irradiation.

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