Defect-induced negative differential resistance of GaN nanowires measured by conductive atomic force microscopy

Wen Huei Chu, Hsin Wei Chiang, Chuan-Pu Liu, Yi Feng Lai, Kuang Yuan Hsu, Hung Chin Chung

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

We report on negative differential resistance (NDR) from individual GaN nanowires prepared without catalysts by thermal chemical vapor deposition. Conductive atomic force microscopy was used to characterize the electron transport behavior and transmission electron microscopy was employed to characterize the microstructure of the GaN nanowires. The current-voltage curve exhibits two clear NDR regions in the forward bias. The defect assisted inelastic tunneling process resulting in the NDR behavior and the related mechanism for energy band diagram is proposed and discussed.

Original languageEnglish
Article number182101
JournalApplied Physics Letters
Volume94
Issue number18
DOIs
Publication statusPublished - 2009 May 18

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nanowires
atomic force microscopy
defects
energy bands
diagrams
vapor deposition
catalysts
transmission electron microscopy
microstructure
electric potential
curves
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Chu, Wen Huei ; Chiang, Hsin Wei ; Liu, Chuan-Pu ; Lai, Yi Feng ; Hsu, Kuang Yuan ; Chung, Hung Chin. / Defect-induced negative differential resistance of GaN nanowires measured by conductive atomic force microscopy. In: Applied Physics Letters. 2009 ; Vol. 94, No. 18.
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Defect-induced negative differential resistance of GaN nanowires measured by conductive atomic force microscopy. / Chu, Wen Huei; Chiang, Hsin Wei; Liu, Chuan-Pu; Lai, Yi Feng; Hsu, Kuang Yuan; Chung, Hung Chin.

In: Applied Physics Letters, Vol. 94, No. 18, 182101, 18.05.2009.

Research output: Contribution to journalArticle

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AU - Hsu, Kuang Yuan

AU - Chung, Hung Chin

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