TY - GEN
T1 - Defect study of manufacturing feasible porous low k dielectrics direct polish for 45nm technology and beyond
AU - Hsu, Chia Lin
AU - Fang, Jeng Yu
AU - Yu, Art
AU - Lin, Jack
AU - Huang, Climbing
AU - Wu, J. Y.
AU - Perng, Dung Ching
PY - 2009
Y1 - 2009
N2 - In this paper, the specific 45nm direct polish related defects and its effects were investigated in order to achieve the high yield manufacturing feasibility of direct polish to porous low-k dielectric film. Crater defect (ring shape metal bridge) was identified caused by abrasive residue in the pre-metal layer polish. Polished with colloidal silica based Cu slurry could suppress this defect efficiently. The plasma treatment on porous ultra low-k (ULK) layer improved the adhesion. However, it induced peeling when polish stop at this treated interface. It could be removed if further polish to intact ULK film. High Cu roughness possibly induced both pattern missing and via open in the following metal layer and suffered the yields. The VIM2 upstream electro-migration (EM) at this generation highly correlated to the roughness degree. By optimizing clean chemical concentration and clean time satisfied the needs of Cu roughness. Yield improvement proved the manufacturing feasibility ofULK direct polish technology.
AB - In this paper, the specific 45nm direct polish related defects and its effects were investigated in order to achieve the high yield manufacturing feasibility of direct polish to porous low-k dielectric film. Crater defect (ring shape metal bridge) was identified caused by abrasive residue in the pre-metal layer polish. Polished with colloidal silica based Cu slurry could suppress this defect efficiently. The plasma treatment on porous ultra low-k (ULK) layer improved the adhesion. However, it induced peeling when polish stop at this treated interface. It could be removed if further polish to intact ULK film. High Cu roughness possibly induced both pattern missing and via open in the following metal layer and suffered the yields. The VIM2 upstream electro-migration (EM) at this generation highly correlated to the roughness degree. By optimizing clean chemical concentration and clean time satisfied the needs of Cu roughness. Yield improvement proved the manufacturing feasibility ofULK direct polish technology.
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U2 - 10.1109/IITC.2009.5090365
DO - 10.1109/IITC.2009.5090365
M3 - Conference contribution
AN - SCOPUS:70349446743
SN - 9781424444939
T3 - Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009
SP - 140
EP - 142
BT - Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009
T2 - 2009 IEEE International Interconnect Technology Conference, IITC 2009
Y2 - 1 June 2009 through 3 June 2009
ER -