Defect study of manufacturing feasible porous low k dielectrics direct polish for 45nm technology and beyond

Chia Lin Hsu, Jeng Yu Fang, Art Yu, Jack Lin, Climbing Huang, J. Y. Wu, Dung Ching Perng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

In this paper, the specific 45nm direct polish related defects and its effects were investigated in order to achieve the high yield manufacturing feasibility of direct polish to porous low-k dielectric film. Crater defect (ring shape metal bridge) was identified caused by abrasive residue in the pre-metal layer polish. Polished with colloidal silica based Cu slurry could suppress this defect efficiently. The plasma treatment on porous ultra low-k (ULK) layer improved the adhesion. However, it induced peeling when polish stop at this treated interface. It could be removed if further polish to intact ULK film. High Cu roughness possibly induced both pattern missing and via open in the following metal layer and suffered the yields. The VIM2 upstream electro-migration (EM) at this generation highly correlated to the roughness degree. By optimizing clean chemical concentration and clean time satisfied the needs of Cu roughness. Yield improvement proved the manufacturing feasibility ofULK direct polish technology.

Original languageEnglish
Title of host publicationProceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009
Pages140-142
Number of pages3
DOIs
Publication statusPublished - 2009
Event2009 IEEE International Interconnect Technology Conference, IITC 2009 - Sapporo, Hokkaido, Japan
Duration: 2009 Jun 12009 Jun 3

Publication series

NameProceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009

Other

Other2009 IEEE International Interconnect Technology Conference, IITC 2009
CountryJapan
CitySapporo, Hokkaido
Period09-06-0109-06-03

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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    Hsu, C. L., Fang, J. Y., Yu, A., Lin, J., Huang, C., Wu, J. Y., & Perng, D. C. (2009). Defect study of manufacturing feasible porous low k dielectrics direct polish for 45nm technology and beyond. In Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009 (pp. 140-142). [5090365] (Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009). https://doi.org/10.1109/IITC.2009.5090365