DEFECTS IN GaAs AND Al//xGa//1// minus //xAs GROWN BY MBE.

C. Y. Chang, K. Y. Cheng, Y. H. Wang, W. C. Liu, S. A. Liao

Research output: Contribution to journalConference article

Abstract

Molecular Beam Epitaxy (MBE) is rapidly becoming a practical and economical epitaxy growth technology for opto-electronic and microwave devices. However, some morphologic defect problems such as whisker, oval defect and polycrystalline growth still remain to be solved. Simple precautions were used to eliminate the defect density.

Original languageEnglish
Pages (from-to)644-645
Number of pages2
JournalElectrochemical Society Extended Abstracts
Volume84-2
Publication statusPublished - 1984

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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