DEFECTS IN GaAs AND Al//xGa//1// minus //xAs GROWN BY MBE.

C. Y. Chang; K. Y. Cheng; Y. H. Wang; W. C. Liu; S. A. Liao

DEFECTS IN GaAs AND Al//xGa//1// minus //xAs GROWN BY MBE.

C. Y. Chang
, K. Y. Cheng
, Y. H. Wang
, W. C. Liu
, S. A. Liao

Institute of Microelectronics

Research output: Contribution to journal › Conference article › peer-review

Abstract

Molecular Beam Epitaxy (MBE) is rapidly becoming a practical and economical epitaxy growth technology for opto-electronic and microwave devices. However, some morphologic defect problems such as whisker, oval defect and polycrystalline growth still remain to be solved. Simple precautions were used to eliminate the defect density.

Original language	English
Pages (from-to)	644-645
Number of pages	2
Journal	Electrochemical Society Extended Abstracts
Volume	84-2
Publication status	Published - 1984

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

@article{d0b4c5436c3646deba07e9f57952c670,

title = "DEFECTS IN GaAs AND Al//xGa//1// minus //xAs GROWN BY MBE.",

abstract = "Molecular Beam Epitaxy (MBE) is rapidly becoming a practical and economical epitaxy growth technology for opto-electronic and microwave devices. However, some morphologic defect problems such as whisker, oval defect and polycrystalline growth still remain to be solved. Simple precautions were used to eliminate the defect density.",

author = "Chang, \{C. Y.\} and Cheng, \{K. Y.\} and Wang, \{Y. H.\} and Liu, \{W. C.\} and Liao, \{S. A.\}",

year = "1984",

language = "English",

volume = "84-2",

pages = "644--645",

journal = "Electrochemical Society Extended Abstracts",

issn = "0160-4619",

}

TY - JOUR

T1 - DEFECTS IN GaAs AND Al//xGa//1// minus //xAs GROWN BY MBE.

AU - Chang, C. Y.

AU - Cheng, K. Y.

AU - Wang, Y. H.

AU - Liu, W. C.

AU - Liao, S. A.

PY - 1984

Y1 - 1984

N2 - Molecular Beam Epitaxy (MBE) is rapidly becoming a practical and economical epitaxy growth technology for opto-electronic and microwave devices. However, some morphologic defect problems such as whisker, oval defect and polycrystalline growth still remain to be solved. Simple precautions were used to eliminate the defect density.

AB - Molecular Beam Epitaxy (MBE) is rapidly becoming a practical and economical epitaxy growth technology for opto-electronic and microwave devices. However, some morphologic defect problems such as whisker, oval defect and polycrystalline growth still remain to be solved. Simple precautions were used to eliminate the defect density.

UR - https://www.scopus.com/pages/publications/0021617189

UR - https://www.scopus.com/pages/publications/0021617189#tab=citedBy

M3 - Conference article

AN - SCOPUS:0021617189

SN - 0160-4619

VL - 84-2

SP - 644

EP - 645

JO - Electrochemical Society Extended Abstracts

JF - Electrochemical Society Extended Abstracts

ER -

DEFECTS IN GaAs AND Al//xGa//1// minus //xAs GROWN BY MBE.

Abstract

All Science Journal Classification (ASJC) codes

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