Defects in m-face GaN films grown by halide vapor phase epitaxy on LiAlO2

R. R. Vanfleet; J. A. Simmons; H. P. Maruska; D. W. Hill; M. M.C. Chou; B. H. Chai

doi:10.1063/1.1599962

Defects in m-face GaN films grown by halide vapor phase epitaxy on LiAlO₂

R. R. Vanfleet
, J. A. Simmons
, H. P. Maruska
, D. W. Hill
, M. M.C. Chou
, B. H. Chai

Program on Key Materials

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

The growth of free-standing wafers (50 mm diameter) of GaN by halide vapor phase epitaxy on lattice-matched γ-LiAlO₂ was discussed. The defects and defect densities in free-standing wafers were also studied by using transmission electron microscopy (TEM). The stacking faults in the basal plane were also reported.

Original language	English
Pages (from-to)	1139-1141
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	6
DOIs	https://doi.org/10.1063/1.1599962
Publication status	Published - 2003 Aug 11

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1599962

Cite this

@article{0da0606cd6fe43feb273b89edabcb0c5,

title = "Defects in m-face GaN films grown by halide vapor phase epitaxy on LiAlO2",

abstract = "The growth of free-standing wafers (50 mm diameter) of GaN by halide vapor phase epitaxy on lattice-matched γ-LiAlO2 was discussed. The defects and defect densities in free-standing wafers were also studied by using transmission electron microscopy (TEM). The stacking faults in the basal plane were also reported.",

author = "Vanfleet, \{R. R.\} and Simmons, \{J. A.\} and Maruska, \{H. P.\} and Hill, \{D. W.\} and Chou, \{M. M.C.\} and Chai, \{B. H.\}",

year = "2003",

month = aug,

day = "11",

doi = "10.1063/1.1599962",

language = "English",

volume = "83",

pages = "1139--1141",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Inc.",

number = "6",

}

TY - JOUR

T1 - Defects in m-face GaN films grown by halide vapor phase epitaxy on LiAlO2

AU - Vanfleet, R. R.

AU - Simmons, J. A.

AU - Maruska, H. P.

AU - Hill, D. W.

AU - Chou, M. M.C.

AU - Chai, B. H.

PY - 2003/8/11

Y1 - 2003/8/11

N2 - The growth of free-standing wafers (50 mm diameter) of GaN by halide vapor phase epitaxy on lattice-matched γ-LiAlO2 was discussed. The defects and defect densities in free-standing wafers were also studied by using transmission electron microscopy (TEM). The stacking faults in the basal plane were also reported.

AB - The growth of free-standing wafers (50 mm diameter) of GaN by halide vapor phase epitaxy on lattice-matched γ-LiAlO2 was discussed. The defects and defect densities in free-standing wafers were also studied by using transmission electron microscopy (TEM). The stacking faults in the basal plane were also reported.

UR - https://www.scopus.com/pages/publications/0042926664

UR - https://www.scopus.com/pages/publications/0042926664#tab=citedBy

U2 - 10.1063/1.1599962

DO - 10.1063/1.1599962

M3 - Article

AN - SCOPUS:0042926664

SN - 0003-6951

VL - 83

SP - 1139

EP - 1141

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Defects in m-face GaN films grown by halide vapor phase epitaxy on LiAlO₂

Abstract

All Science Journal Classification (ASJC) codes

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