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Defects in m-face GaN films grown by halide vapor phase epitaxy on LiAlO
2
R. R. Vanfleet
, J. A. Simmons
, H. P. Maruska
, D. W. Hill
,
M. M.C. Chou
, B. H. Chai
Program on Key Materials
Research output
:
Contribution to journal
›
Article
›
peer-review
21
Citations (Scopus)
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Dive into the research topics of 'Defects in m-face GaN films grown by halide vapor phase epitaxy on LiAlO
2
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Keyphrases
Wafer
100%
GaN Films
100%
LiAlO2
100%
Halide Vapor Phase Epitaxy
100%
Transmission Electron Microscopy
50%
Basal Plane
50%
Lattice Matching
50%
Defect Density
50%
Stacking Faults
50%
Material Science
Film
100%
Halide
100%
Vapor Phase Epitaxy
100%
Transmission Electron Microscopy
50%
Defect Density
50%
Crystal Defect
50%
Chemistry
Halide
100%
Vapor Phase Epitaxy
100%
Transmission Electron Microscopy
50%
Crystal Defect
50%
Physics
Vapor Phase Epitaxy
100%
Transmission Electron Microscopy
50%
Crystal Defect
50%
Chemical Engineering
Film
100%
Vapor Phase Epitaxy
100%