TY - GEN
T1 - Degradation of Cu/Ta-N/Ta/Low-k structure via outgassing of Low-k dielectrics
AU - Chang, C. C.
AU - JangJian, Shiu Ko
AU - Lai, Yi Sheng
AU - Chen, J. S.
PY - 2006
Y1 - 2006
N2 - In this work, the effects of thermal treatment on the materials characteristics of Cu/Ta-N/Ta/low-k material/〈Si〉 structures are explored, where Ta-N layers are as-deposited amorphous TaNx (x∼0.5) or polycrystalline TaN films and low-k materials include fluorinated silicate glass (FSG) and organosilicate glass (OSG). The thermal stability of the multilayered structures are examined by annealing the samples in a vacuum furnace at 400 °C for 30 or 60 min and investigated by using scanning electron microscopy, thermal desorption spectroscopy, Fourier transform infrared spectrometer, and X-ray photoelectron spectrometry. The cross-sectional images of the specimens show that delamination of the metallization layers can be eliminated by baking the dielectrics prior to the deposition of metallization layers. Furthermore, the experimental results indicate that not only water absorption but also fluorine gas outgassing should be the serious drawbacks of FSG in applications. Meanwhile, TaN is a more effective barrier to prevent Ta from interacting with FSG and Cu from diffusing than TaNx( x-0.5) is. On the other hand, for the OSG, it possesses an evidently better thermal stability as compared with FSG. The interfacial reactions between the Ta-N/Ta bi-layer and low-k materials, which degrade the devices, will be discussed in this study, too. copyright The Electrochemical Society.
AB - In this work, the effects of thermal treatment on the materials characteristics of Cu/Ta-N/Ta/low-k material/〈Si〉 structures are explored, where Ta-N layers are as-deposited amorphous TaNx (x∼0.5) or polycrystalline TaN films and low-k materials include fluorinated silicate glass (FSG) and organosilicate glass (OSG). The thermal stability of the multilayered structures are examined by annealing the samples in a vacuum furnace at 400 °C for 30 or 60 min and investigated by using scanning electron microscopy, thermal desorption spectroscopy, Fourier transform infrared spectrometer, and X-ray photoelectron spectrometry. The cross-sectional images of the specimens show that delamination of the metallization layers can be eliminated by baking the dielectrics prior to the deposition of metallization layers. Furthermore, the experimental results indicate that not only water absorption but also fluorine gas outgassing should be the serious drawbacks of FSG in applications. Meanwhile, TaN is a more effective barrier to prevent Ta from interacting with FSG and Cu from diffusing than TaNx( x-0.5) is. On the other hand, for the OSG, it possesses an evidently better thermal stability as compared with FSG. The interfacial reactions between the Ta-N/Ta bi-layer and low-k materials, which degrade the devices, will be discussed in this study, too. copyright The Electrochemical Society.
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U2 - 10.1149/1.2218482
DO - 10.1149/1.2218482
M3 - Conference contribution
AN - SCOPUS:33846787048
T3 - ECS Transactions
SP - 105
EP - 115
BT - Copper Interconnects, New Contact and Barriers Metallurgies/Structures, and Low-k Interlevel Dielectrics III
PB - Electrochemical Society Inc.
T2 - Copper Interconnects, New Contact and Barrier Metallurgies/Structures, and Low-k Interlevel Dielectrics III - 208th Electrochemical Society Meeting
Y2 - 16 October 2005 through 21 October 2005
ER -