Degradation of Cu/Ta-N/Ta/Low-k structure via outgassing of Low-k dielectrics

C. C. Chang, Shiu Ko JangJian, Yi Sheng Lai, J. S. Chen

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

In this work, the effects of thermal treatment on the materials characteristics of Cu/Ta-N/Ta/low-k material/〈Si〉 structures are explored, where Ta-N layers are as-deposited amorphous TaNx (x∼0.5) or polycrystalline TaN films and low-k materials include fluorinated silicate glass (FSG) and organosilicate glass (OSG). The thermal stability of the multilayered structures are examined by annealing the samples in a vacuum furnace at 400 °C for 30 or 60 min and investigated by using scanning electron microscopy, thermal desorption spectroscopy, Fourier transform infrared spectrometer, and X-ray photoelectron spectrometry. The cross-sectional images of the specimens show that delamination of the metallization layers can be eliminated by baking the dielectrics prior to the deposition of metallization layers. Furthermore, the experimental results indicate that not only water absorption but also fluorine gas outgassing should be the serious drawbacks of FSG in applications. Meanwhile, TaN is a more effective barrier to prevent Ta from interacting with FSG and Cu from diffusing than TaNx( x-0.5) is. On the other hand, for the OSG, it possesses an evidently better thermal stability as compared with FSG. The interfacial reactions between the Ta-N/Ta bi-layer and low-k materials, which degrade the devices, will be discussed in this study, too. copyright The Electrochemical Society.

Original languageEnglish
Pages (from-to)105-115
Number of pages11
JournalECS Transactions
Volume1
Issue number11
DOIs
Publication statusPublished - 2006 Dec 1
EventCopper Interconnects, New Contact and Barrier Metallurgies/Structures, and Low-k Interlevel Dielectrics III - 208th Electrochemical Society Meeting - Los Angeles, CA, United States
Duration: 2005 Oct 162005 Oct 21

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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