Delaminated MnPS3 with Multiple Layers Coupled with Si Featuring Ultrahigh Detectivity and Environmental Stability for UV Photodetection

Chia Yun Chen, Tsung Yen Wu, Kuan Han Lin, Jheng Yi Li, Chia Nung Kuo, Chin Shan Lue

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Silicon (Si), the dominant semiconductor in microelectronics yet lacking optoelectronic functionalities in UV regions, has been researched extensively to make revolutionary changes. In this study, the inherent drawback of Si on optoelectronic functionalities in UV regions is potentially overcome through heterostructure coupling of delaminated p-type MnPS3, having bulk, multiple-layer, and few-layer features, with n-type Si. By artificially mimicking the architectures of shrubs with unique UV shading phenomena, the revolutionary multiple-layer MnPS3 structures with staggered stacking configurations trigger outstanding UV photosensing performances, displaying an average EQE value of 1.1 × 103%, average photoresponsivity of 3.1 × 102 A/W, average detectivity of 1.9 × 1014 cm Hz1/2W1−, and average on/off ratio of 1.8 × 103 under 365 nm light. To the best of our knowledge, this is the first attempt toward realizing gate-free MnPS3based UV photodetectors, while all of the photodetection outcomes are better than those of more sophisticated field-effect transistor (FET) designs, which have remarkable impacts on the practicality and functionality of next-generation UV optoelectronics.

Original languageEnglish
Pages (from-to)54643-54654
Number of pages12
JournalACS Applied Materials and Interfaces
Volume15
Issue number47
DOIs
Publication statusPublished - 2023

All Science Journal Classification (ASJC) codes

  • General Materials Science

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