Demonstration of annealing-free metal-insulator-semiconductor (mis) ohmic contacts on a gan substrate using low work-function metal ytterbium (yb) and al2o3 interfacial layer

Tian Li Wu, Yang Yan Tseng, Chih Fang Huang, Zih Sin Chen, Chih Chien Lin, Chung Jen Chung, Po Kai Huang, Kuo-Hsing Kao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this letter, the Metal-Insulator-Semiconductor (MIS) contacts are fabricated on the GaN substrates and compared to the Metal-Semiconductor (MS) contacts. To alleviate the Fermi level pinning effect at the Metal-Semiconductor interface, an Al2O3 interfacial layer (IL) (1 ~ 3 nm) is used to form the MIS contacts. By comparing the electrical characteristics, the contact with 0nm Al2O3 layer, i.e., MS contact, shows a lowest current compared to the contacts with an Al2O3 IL, i.e., MIS contact. Furthermore, the current at 0.5V in the fabricated Transmission Line Measurement (TLM) device with 1nm Al2O3 IL is 103 times higher the one without an Al2O3 IL. This proves that inserting an Al2O3 IL could mitigate the Fermi level pinning, resulting in a low Schottky barrier height. Finally, based on the TLM analysis, the resistivity of 5.1×10-4 Ω.cm2 is demonstrated in the MIS contact with 1nm Al2O3 IL.

Original languageEnglish
Title of host publicationWiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728121451
DOIs
Publication statusPublished - 2019 May 1
Event2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2019 - Taipei, Taiwan
Duration: 2019 May 232019 May 25

Publication series

NameWiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

Conference

Conference2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2019
CountryTaiwan
CityTaipei
Period19-05-2319-05-25

Fingerprint

Ytterbium
Ohmic contacts
Demonstrations
Metals
Annealing
Semiconductor materials
Substrates
Fermi level
Electric lines

All Science Journal Classification (ASJC) codes

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Wu, T. L., Tseng, Y. Y., Huang, C. F., Chen, Z. S., Lin, C. C., Chung, C. J., ... Kao, K-H. (2019). Demonstration of annealing-free metal-insulator-semiconductor (mis) ohmic contacts on a gan substrate using low work-function metal ytterbium (yb) and al2o3 interfacial layer. In WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia [8760323] (WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDAAsia.2019.8760323
Wu, Tian Li ; Tseng, Yang Yan ; Huang, Chih Fang ; Chen, Zih Sin ; Lin, Chih Chien ; Chung, Chung Jen ; Huang, Po Kai ; Kao, Kuo-Hsing. / Demonstration of annealing-free metal-insulator-semiconductor (mis) ohmic contacts on a gan substrate using low work-function metal ytterbium (yb) and al2o3 interfacial layer. WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia. Institute of Electrical and Electronics Engineers Inc., 2019. (WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia).
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title = "Demonstration of annealing-free metal-insulator-semiconductor (mis) ohmic contacts on a gan substrate using low work-function metal ytterbium (yb) and al2o3 interfacial layer",
abstract = "In this letter, the Metal-Insulator-Semiconductor (MIS) contacts are fabricated on the GaN substrates and compared to the Metal-Semiconductor (MS) contacts. To alleviate the Fermi level pinning effect at the Metal-Semiconductor interface, an Al2O3 interfacial layer (IL) (1 ~ 3 nm) is used to form the MIS contacts. By comparing the electrical characteristics, the contact with 0nm Al2O3 layer, i.e., MS contact, shows a lowest current compared to the contacts with an Al2O3 IL, i.e., MIS contact. Furthermore, the current at 0.5V in the fabricated Transmission Line Measurement (TLM) device with 1nm Al2O3 IL is 103 times higher the one without an Al2O3 IL. This proves that inserting an Al2O3 IL could mitigate the Fermi level pinning, resulting in a low Schottky barrier height. Finally, based on the TLM analysis, the resistivity of 5.1×10-4 Ω.cm2 is demonstrated in the MIS contact with 1nm Al2O3 IL.",
author = "Wu, {Tian Li} and Tseng, {Yang Yan} and Huang, {Chih Fang} and Chen, {Zih Sin} and Lin, {Chih Chien} and Chung, {Chung Jen} and Huang, {Po Kai} and Kuo-Hsing Kao",
year = "2019",
month = "5",
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doi = "10.1109/WiPDAAsia.2019.8760323",
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series = "WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
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Wu, TL, Tseng, YY, Huang, CF, Chen, ZS, Lin, CC, Chung, CJ, Huang, PK & Kao, K-H 2019, Demonstration of annealing-free metal-insulator-semiconductor (mis) ohmic contacts on a gan substrate using low work-function metal ytterbium (yb) and al2o3 interfacial layer. in WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia., 8760323, WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, Institute of Electrical and Electronics Engineers Inc., 2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2019, Taipei, Taiwan, 19-05-23. https://doi.org/10.1109/WiPDAAsia.2019.8760323

Demonstration of annealing-free metal-insulator-semiconductor (mis) ohmic contacts on a gan substrate using low work-function metal ytterbium (yb) and al2o3 interfacial layer. / Wu, Tian Li; Tseng, Yang Yan; Huang, Chih Fang; Chen, Zih Sin; Lin, Chih Chien; Chung, Chung Jen; Huang, Po Kai; Kao, Kuo-Hsing.

WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia. Institute of Electrical and Electronics Engineers Inc., 2019. 8760323 (WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Demonstration of annealing-free metal-insulator-semiconductor (mis) ohmic contacts on a gan substrate using low work-function metal ytterbium (yb) and al2o3 interfacial layer

AU - Wu, Tian Li

AU - Tseng, Yang Yan

AU - Huang, Chih Fang

AU - Chen, Zih Sin

AU - Lin, Chih Chien

AU - Chung, Chung Jen

AU - Huang, Po Kai

AU - Kao, Kuo-Hsing

PY - 2019/5/1

Y1 - 2019/5/1

N2 - In this letter, the Metal-Insulator-Semiconductor (MIS) contacts are fabricated on the GaN substrates and compared to the Metal-Semiconductor (MS) contacts. To alleviate the Fermi level pinning effect at the Metal-Semiconductor interface, an Al2O3 interfacial layer (IL) (1 ~ 3 nm) is used to form the MIS contacts. By comparing the electrical characteristics, the contact with 0nm Al2O3 layer, i.e., MS contact, shows a lowest current compared to the contacts with an Al2O3 IL, i.e., MIS contact. Furthermore, the current at 0.5V in the fabricated Transmission Line Measurement (TLM) device with 1nm Al2O3 IL is 103 times higher the one without an Al2O3 IL. This proves that inserting an Al2O3 IL could mitigate the Fermi level pinning, resulting in a low Schottky barrier height. Finally, based on the TLM analysis, the resistivity of 5.1×10-4 Ω.cm2 is demonstrated in the MIS contact with 1nm Al2O3 IL.

AB - In this letter, the Metal-Insulator-Semiconductor (MIS) contacts are fabricated on the GaN substrates and compared to the Metal-Semiconductor (MS) contacts. To alleviate the Fermi level pinning effect at the Metal-Semiconductor interface, an Al2O3 interfacial layer (IL) (1 ~ 3 nm) is used to form the MIS contacts. By comparing the electrical characteristics, the contact with 0nm Al2O3 layer, i.e., MS contact, shows a lowest current compared to the contacts with an Al2O3 IL, i.e., MIS contact. Furthermore, the current at 0.5V in the fabricated Transmission Line Measurement (TLM) device with 1nm Al2O3 IL is 103 times higher the one without an Al2O3 IL. This proves that inserting an Al2O3 IL could mitigate the Fermi level pinning, resulting in a low Schottky barrier height. Finally, based on the TLM analysis, the resistivity of 5.1×10-4 Ω.cm2 is demonstrated in the MIS contact with 1nm Al2O3 IL.

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U2 - 10.1109/WiPDAAsia.2019.8760323

DO - 10.1109/WiPDAAsia.2019.8760323

M3 - Conference contribution

AN - SCOPUS:85070313703

T3 - WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

BT - WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Wu TL, Tseng YY, Huang CF, Chen ZS, Lin CC, Chung CJ et al. Demonstration of annealing-free metal-insulator-semiconductor (mis) ohmic contacts on a gan substrate using low work-function metal ytterbium (yb) and al2o3 interfacial layer. In WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia. Institute of Electrical and Electronics Engineers Inc. 2019. 8760323. (WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia). https://doi.org/10.1109/WiPDAAsia.2019.8760323