Demonstration of annealing-free metal-insulator-semiconductor (mis) ohmic contacts on a gan substrate using low work-function metal ytterbium (yb) and al2o3 interfacial layer

Tian Li Wu, Yang Yan Tseng, Chih Fang Huang, Zih Sin Chen, Chih Chien Lin, Chung Jen Chung, Po Kai Huang, Kuo Hsing Kao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this letter, the Metal-Insulator-Semiconductor (MIS) contacts are fabricated on the GaN substrates and compared to the Metal-Semiconductor (MS) contacts. To alleviate the Fermi level pinning effect at the Metal-Semiconductor interface, an Al2O3 interfacial layer (IL) (1 ~ 3 nm) is used to form the MIS contacts. By comparing the electrical characteristics, the contact with 0nm Al2O3 layer, i.e., MS contact, shows a lowest current compared to the contacts with an Al2O3 IL, i.e., MIS contact. Furthermore, the current at 0.5V in the fabricated Transmission Line Measurement (TLM) device with 1nm Al2O3 IL is 103 times higher the one without an Al2O3 IL. This proves that inserting an Al2O3 IL could mitigate the Fermi level pinning, resulting in a low Schottky barrier height. Finally, based on the TLM analysis, the resistivity of 5.1×10-4 Ω.cm2 is demonstrated in the MIS contact with 1nm Al2O3 IL.

Original languageEnglish
Title of host publicationWiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728121451
DOIs
Publication statusPublished - 2019 May
Event2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2019 - Taipei, Taiwan
Duration: 2019 May 232019 May 25

Publication series

NameWiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

Conference

Conference2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2019
CountryTaiwan
CityTaipei
Period19-05-2319-05-25

All Science Journal Classification (ASJC) codes

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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