Demonstration of GaN-based solar cells with GaN/InGaN superlattice absorption layers

Jinn-Kong Sheu, Chih Ciao Yang, Shang Ju Tu, Kuo Hua Chang, Ming Lun Lee, Wei-Chi Lai, Li Chi Peng

Research output: Contribution to journalArticle

58 Citations (Scopus)

Abstract

In this letter, we display InGaN/GaN-based photovoltaic (PV) devices with active layers in absorbing the solar spectrum around blue regions. The GaN/In 0.25 Ga 0.75 N superlattice layers grown by metalorganic vapor-phase epitaxy are designed as the absorption layers with the same total thickness. The PV effect is almost absent when the In 0.25 Ga 0.75 N single layer is used as the absorption layer. This could be due to the large leakage current caused by the poor material quality and the relatively small shunt resistance. Devices with superlattice structure illuminated under a one-sun air-mass 1.5-G condition exhibit an open-circuit voltage of around 1.4 V and a short-circuit current density of around 0.8 mA/cm 2 corresponding to a conversion efficiency of around 0.58%.

Original languageEnglish
Pages (from-to)225-227
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number3
DOIs
Publication statusPublished - 2009 Jan 30

Fingerprint

Photovoltaic effects
Metallorganic vapor phase epitaxy
Open circuit voltage
Leakage currents
Short circuit currents
Sun
Conversion efficiency
Solar cells
Current density
Demonstrations
Air

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Sheu, Jinn-Kong ; Yang, Chih Ciao ; Tu, Shang Ju ; Chang, Kuo Hua ; Lee, Ming Lun ; Lai, Wei-Chi ; Peng, Li Chi. / Demonstration of GaN-based solar cells with GaN/InGaN superlattice absorption layers. In: IEEE Electron Device Letters. 2009 ; Vol. 30, No. 3. pp. 225-227.
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abstract = "In this letter, we display InGaN/GaN-based photovoltaic (PV) devices with active layers in absorbing the solar spectrum around blue regions. The GaN/In 0.25 Ga 0.75 N superlattice layers grown by metalorganic vapor-phase epitaxy are designed as the absorption layers with the same total thickness. The PV effect is almost absent when the In 0.25 Ga 0.75 N single layer is used as the absorption layer. This could be due to the large leakage current caused by the poor material quality and the relatively small shunt resistance. Devices with superlattice structure illuminated under a one-sun air-mass 1.5-G condition exhibit an open-circuit voltage of around 1.4 V and a short-circuit current density of around 0.8 mA/cm 2 corresponding to a conversion efficiency of around 0.58{\%}.",
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Demonstration of GaN-based solar cells with GaN/InGaN superlattice absorption layers. / Sheu, Jinn-Kong; Yang, Chih Ciao; Tu, Shang Ju; Chang, Kuo Hua; Lee, Ming Lun; Lai, Wei-Chi; Peng, Li Chi.

In: IEEE Electron Device Letters, Vol. 30, No. 3, 30.01.2009, p. 225-227.

Research output: Contribution to journalArticle

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T1 - Demonstration of GaN-based solar cells with GaN/InGaN superlattice absorption layers

AU - Sheu, Jinn-Kong

AU - Yang, Chih Ciao

AU - Tu, Shang Ju

AU - Chang, Kuo Hua

AU - Lee, Ming Lun

AU - Lai, Wei-Chi

AU - Peng, Li Chi

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AB - In this letter, we display InGaN/GaN-based photovoltaic (PV) devices with active layers in absorbing the solar spectrum around blue regions. The GaN/In 0.25 Ga 0.75 N superlattice layers grown by metalorganic vapor-phase epitaxy are designed as the absorption layers with the same total thickness. The PV effect is almost absent when the In 0.25 Ga 0.75 N single layer is used as the absorption layer. This could be due to the large leakage current caused by the poor material quality and the relatively small shunt resistance. Devices with superlattice structure illuminated under a one-sun air-mass 1.5-G condition exhibit an open-circuit voltage of around 1.4 V and a short-circuit current density of around 0.8 mA/cm 2 corresponding to a conversion efficiency of around 0.58%.

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