Demonstration of high peak-to-valley current ratio in an N-p-n AlGaAs/GaAs structure

Y. H. Wang, H. C. Wei, M. P. Houng

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Using the combination of carrier injection modulation (bipolar mode) and channel blocking effect (junction field-effect transistor mode), we demonstrate a three-terminal voltage-controllable negative differential resistance device with a high room-temperature peak-to-valley current ratio in an N-AlGaAs/p +-GaAs/n-GaAs structure. The third terminal is formed through a self-aligned p-type diffused ohmic contact process to the n-GaAs layer instead of the p+-GaAs layer. The structure can be viewed as a modified integration circuit of a bipolar transistor and a junction field-effect transistor.

Original languageEnglish
Pages (from-to)7990-7992
Number of pages3
JournalJournal of Applied Physics
Volume73
Issue number11
DOIs
Publication statusPublished - 1993 Dec 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint

Dive into the research topics of 'Demonstration of high peak-to-valley current ratio in an N-p-n AlGaAs/GaAs structure'. Together they form a unique fingerprint.

Cite this