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Dependence of damage and strain on the temperature of Si irradiation in epitaxial Ge0.10Si0.90 films on Si(100)
D. Y.C. Lie, J. H. Song, A. Vantomme, F. Eisen, M. A. Nicolet, N. D. Theodore, T. K. Carns, K. L. Wang
Research output: Contribution to journal › Article › peer-review
8
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(Scopus)