TY - JOUR
T1 - Dependence of ZnO films on sputtering parameters and saw device on ZnO/InP
AU - Lee, C. T.
AU - Su, Y. K.
AU - Chen, S. L.
N1 - Funding Information:
The authors wish to thank Professor C.H. Huang, at Tamkang University, for providing some of the measurement facilities. They also wish to thank Dr. M.C. Wu for fruitful discussions and encouragement. This project was supported by the National Science Council, Republic of China, under the contract NSC 75-0608-E006-06.
PY - 1989/8
Y1 - 1989/8
N2 - To compensate the piezoelectrical properties of InP-based material for the applications of monolithic acousto-optic devices and systems, a high quality ZnO film with a highly preferred orientation and fine structure should be deposited onto on InP substrate. The dependence of the quality of ZnO films on RF sputtering parameters was investigated. The optimal deposition conditions are obtained as substrate temperature of 250°C, sputtering power of 350 W, and oxygen content of 20 vol%. A SAW device with center frequency of 105 MHz fabricated on the ZnO/InP was demonstrated.
AB - To compensate the piezoelectrical properties of InP-based material for the applications of monolithic acousto-optic devices and systems, a high quality ZnO film with a highly preferred orientation and fine structure should be deposited onto on InP substrate. The dependence of the quality of ZnO films on RF sputtering parameters was investigated. The optimal deposition conditions are obtained as substrate temperature of 250°C, sputtering power of 350 W, and oxygen content of 20 vol%. A SAW device with center frequency of 105 MHz fabricated on the ZnO/InP was demonstrated.
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U2 - 10.1016/0022-0248(89)90637-4
DO - 10.1016/0022-0248(89)90637-4
M3 - Article
AN - SCOPUS:0024714786
SN - 0022-0248
VL - 96
SP - 785
EP - 789
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 4
ER -