Dependence of ZnO films on sputtering parameters and saw device on ZnO/InP

C. T. Lee, Y. K. Su, S. L. Chen

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

To compensate the piezoelectrical properties of InP-based material for the applications of monolithic acousto-optic devices and systems, a high quality ZnO film with a highly preferred orientation and fine structure should be deposited onto on InP substrate. The dependence of the quality of ZnO films on RF sputtering parameters was investigated. The optimal deposition conditions are obtained as substrate temperature of 250°C, sputtering power of 350 W, and oxygen content of 20 vol%. A SAW device with center frequency of 105 MHz fabricated on the ZnO/InP was demonstrated.

Original languageEnglish
Pages (from-to)785-789
Number of pages5
JournalJournal of Crystal Growth
Volume96
Issue number4
DOIs
Publication statusPublished - 1989 Aug

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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