Dependence of ZnO films on sputtering parameters and saw device on ZnO/InP

C. T. Lee; Y. K. Su; S. L. Chen

doi:10.1016/0022-0248(89)90637-4

Dependence of ZnO films on sputtering parameters and saw device on ZnO/InP

C. T. Lee
, Y. K. Su
, S. L. Chen

Department of Photonics

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

To compensate the piezoelectrical properties of InP-based material for the applications of monolithic acousto-optic devices and systems, a high quality ZnO film with a highly preferred orientation and fine structure should be deposited onto on InP substrate. The dependence of the quality of ZnO films on RF sputtering parameters was investigated. The optimal deposition conditions are obtained as substrate temperature of 250°C, sputtering power of 350 W, and oxygen content of 20 vol%. A SAW device with center frequency of 105 MHz fabricated on the ZnO/InP was demonstrated.

Original language	English
Pages (from-to)	785-789
Number of pages	5
Journal	Journal of Crystal Growth
Volume	96
Issue number	4
DOIs	https://doi.org/10.1016/0022-0248(89)90637-4
Publication status	Published - 1989 Aug

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(89)90637-4

Cite this

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title = "Dependence of ZnO films on sputtering parameters and saw device on ZnO/InP",

abstract = "To compensate the piezoelectrical properties of InP-based material for the applications of monolithic acousto-optic devices and systems, a high quality ZnO film with a highly preferred orientation and fine structure should be deposited onto on InP substrate. The dependence of the quality of ZnO films on RF sputtering parameters was investigated. The optimal deposition conditions are obtained as substrate temperature of 250°C, sputtering power of 350 W, and oxygen content of 20 vol\%. A SAW device with center frequency of 105 MHz fabricated on the ZnO/InP was demonstrated.",

author = "Lee, \{C. T.\} and Su, \{Y. K.\} and Chen, \{S. L.\}",

note = "Funding Information: The authors wish to thank Professor C.H. Huang, at Tamkang University, for providing some of the measurement facilities. They also wish to thank Dr. M.C. Wu for fruitful discussions and encouragement. This project was supported by the National Science Council, Republic of China, under the contract NSC 75-0608-E006-06.",

year = "1989",

month = aug,

doi = "10.1016/0022-0248(89)90637-4",

language = "English",

volume = "96",

pages = "785--789",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier BV",

number = "4",

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TY - JOUR

T1 - Dependence of ZnO films on sputtering parameters and saw device on ZnO/InP

AU - Lee, C. T.

AU - Su, Y. K.

AU - Chen, S. L.

N1 - Funding Information: The authors wish to thank Professor C.H. Huang, at Tamkang University, for providing some of the measurement facilities. They also wish to thank Dr. M.C. Wu for fruitful discussions and encouragement. This project was supported by the National Science Council, Republic of China, under the contract NSC 75-0608-E006-06.

PY - 1989/8

Y1 - 1989/8

N2 - To compensate the piezoelectrical properties of InP-based material for the applications of monolithic acousto-optic devices and systems, a high quality ZnO film with a highly preferred orientation and fine structure should be deposited onto on InP substrate. The dependence of the quality of ZnO films on RF sputtering parameters was investigated. The optimal deposition conditions are obtained as substrate temperature of 250°C, sputtering power of 350 W, and oxygen content of 20 vol%. A SAW device with center frequency of 105 MHz fabricated on the ZnO/InP was demonstrated.

AB - To compensate the piezoelectrical properties of InP-based material for the applications of monolithic acousto-optic devices and systems, a high quality ZnO film with a highly preferred orientation and fine structure should be deposited onto on InP substrate. The dependence of the quality of ZnO films on RF sputtering parameters was investigated. The optimal deposition conditions are obtained as substrate temperature of 250°C, sputtering power of 350 W, and oxygen content of 20 vol%. A SAW device with center frequency of 105 MHz fabricated on the ZnO/InP was demonstrated.

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DO - 10.1016/0022-0248(89)90637-4

M3 - Article

AN - SCOPUS:0024714786

SN - 0022-0248

VL - 96

SP - 785

EP - 789

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 4

ER -

Dependence of ZnO films on sputtering parameters and saw device on ZnO/InP

Abstract

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