Dependences of the Al thickness and annealing temperature on the structural, optical and electrical properties in ZnO/Al multilayers

Y. M. Hu, C. W. Lin, Jung-Chun Huang

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

High-quality (0001) oriented ZnO (300 Å) film and [ZnO(100 Å)/Al(tAl)]3 (tAl = 0.6, 1.7, 2.8 Å) multilayers have been established at room temperature on Al 2O3 (0001) substrates by ion-beam sputtering. The structural, optical and electrical properties of multilayers as functions of both the Al thickness and annealing temperature are reported. We have verified that Al thickness and annealing temperature are the key factors to optimize transparency-conducting property in ZnO/Al multilayers. The optimum Al thickness and annealing temperature for ZnO/Al multilayer of 300 Å thin is 1.7 Å (about one Al atomic layer) and 400 °C, respectively, leading to the relatively lower resistivity (2.8 × 10- 3 Ω cm) and higher Hall mobility (10 cm2/V•s) without suppression of the visible transmittance (above 85%).

Original languageEnglish
Pages (from-to)130-134
Number of pages5
JournalThin Solid Films
Volume497
Issue number1-2
DOIs
Publication statusPublished - 2006 Feb 21

Fingerprint

Structural properties
Multilayers
Electric properties
Optical properties
electrical properties
Annealing
optical properties
annealing
Hall mobility
Temperature
temperature
transmittance
sputtering
ion beams
retarding
Transparency
Ion beams
Sputtering
conduction
electrical resistivity

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

@article{6172e90153374319b27750f8012a18f8,
title = "Dependences of the Al thickness and annealing temperature on the structural, optical and electrical properties in ZnO/Al multilayers",
abstract = "High-quality (0001) oriented ZnO (300 {\AA}) film and [ZnO(100 {\AA})/Al(tAl)]3 (tAl = 0.6, 1.7, 2.8 {\AA}) multilayers have been established at room temperature on Al 2O3 (0001) substrates by ion-beam sputtering. The structural, optical and electrical properties of multilayers as functions of both the Al thickness and annealing temperature are reported. We have verified that Al thickness and annealing temperature are the key factors to optimize transparency-conducting property in ZnO/Al multilayers. The optimum Al thickness and annealing temperature for ZnO/Al multilayer of 300 {\AA} thin is 1.7 {\AA} (about one Al atomic layer) and 400 °C, respectively, leading to the relatively lower resistivity (2.8 × 10- 3 Ω cm) and higher Hall mobility (10 cm2/V•s) without suppression of the visible transmittance (above 85{\%}).",
author = "Hu, {Y. M.} and Lin, {C. W.} and Jung-Chun Huang",
year = "2006",
month = "2",
day = "21",
doi = "10.1016/j.tsf.2005.10.058",
language = "English",
volume = "497",
pages = "130--134",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1-2",

}

Dependences of the Al thickness and annealing temperature on the structural, optical and electrical properties in ZnO/Al multilayers. / Hu, Y. M.; Lin, C. W.; Huang, Jung-Chun.

In: Thin Solid Films, Vol. 497, No. 1-2, 21.02.2006, p. 130-134.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Dependences of the Al thickness and annealing temperature on the structural, optical and electrical properties in ZnO/Al multilayers

AU - Hu, Y. M.

AU - Lin, C. W.

AU - Huang, Jung-Chun

PY - 2006/2/21

Y1 - 2006/2/21

N2 - High-quality (0001) oriented ZnO (300 Å) film and [ZnO(100 Å)/Al(tAl)]3 (tAl = 0.6, 1.7, 2.8 Å) multilayers have been established at room temperature on Al 2O3 (0001) substrates by ion-beam sputtering. The structural, optical and electrical properties of multilayers as functions of both the Al thickness and annealing temperature are reported. We have verified that Al thickness and annealing temperature are the key factors to optimize transparency-conducting property in ZnO/Al multilayers. The optimum Al thickness and annealing temperature for ZnO/Al multilayer of 300 Å thin is 1.7 Å (about one Al atomic layer) and 400 °C, respectively, leading to the relatively lower resistivity (2.8 × 10- 3 Ω cm) and higher Hall mobility (10 cm2/V•s) without suppression of the visible transmittance (above 85%).

AB - High-quality (0001) oriented ZnO (300 Å) film and [ZnO(100 Å)/Al(tAl)]3 (tAl = 0.6, 1.7, 2.8 Å) multilayers have been established at room temperature on Al 2O3 (0001) substrates by ion-beam sputtering. The structural, optical and electrical properties of multilayers as functions of both the Al thickness and annealing temperature are reported. We have verified that Al thickness and annealing temperature are the key factors to optimize transparency-conducting property in ZnO/Al multilayers. The optimum Al thickness and annealing temperature for ZnO/Al multilayer of 300 Å thin is 1.7 Å (about one Al atomic layer) and 400 °C, respectively, leading to the relatively lower resistivity (2.8 × 10- 3 Ω cm) and higher Hall mobility (10 cm2/V•s) without suppression of the visible transmittance (above 85%).

UR - http://www.scopus.com/inward/record.url?scp=30344475820&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=30344475820&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2005.10.058

DO - 10.1016/j.tsf.2005.10.058

M3 - Article

AN - SCOPUS:30344475820

VL - 497

SP - 130

EP - 134

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

ER -