Depletion-MIS-like InGaAs/GaAs delta-doped structures with high breakdown voltage and large gate voltage swing

C. L. Wu; W. C. Hsu; H. M. Shieh; M. J. Kao

doi:10.1016/0038-1101(94)E0078-S

Depletion-MIS-like InGaAs/GaAs delta-doped structures with high breakdown voltage and large gate voltage swing

C. L. Wu, W. C. Hsu, H. M. Shieh, M. J. Kao

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Depletion-MIS-like GaAs/In_0.25Ga_0.75As/GaAs delta-doped heterostructure field effect transistors (HFETs) have been successfully grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). Hall mobilities as high as 5600 (22000) and 3920 (18400) cm²/V.s with sheet carrier densities of 2 (1.8) and 4.3 (2.5) × 10¹² cm^-2 for single and double delta-doped structures at 300 (77) K, respectively are achieved. Breakdown voltages as high as 26 V for single and 16 V for double delta-doped structures are obtained. Meanwhile, the structures in this work reveal improved gate voltage swings. By virtue of the photoluminescence (PL) spectra, most of the carriers transferring from the delta-doped layer to the InGaAs channel at zero gate bias are found. Negative differential resistance (NDR) phenomena under illumination which degrades the transconductances are also observed and discussed.

Original language	English
Pages (from-to)	433-436
Number of pages	4
Journal	Solid State Electronics
Volume	38
Issue number	2
DOIs	https://doi.org/10.1016/0038-1101(94)E0078-S
Publication status	Published - 1995 Feb

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/0038-1101(94)E0078-S

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@article{63cef4adfb384006bd622ac83b497bbc,

title = "Depletion-MIS-like InGaAs/GaAs delta-doped structures with high breakdown voltage and large gate voltage swing",

abstract = "Depletion-MIS-like GaAs/In0.25Ga0.75As/GaAs delta-doped heterostructure field effect transistors (HFETs) have been successfully grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). Hall mobilities as high as 5600 (22000) and 3920 (18400) cm2/V.s with sheet carrier densities of 2 (1.8) and 4.3 (2.5) × 1012 cm-2 for single and double delta-doped structures at 300 (77) K, respectively are achieved. Breakdown voltages as high as 26 V for single and 16 V for double delta-doped structures are obtained. Meanwhile, the structures in this work reveal improved gate voltage swings. By virtue of the photoluminescence (PL) spectra, most of the carriers transferring from the delta-doped layer to the InGaAs channel at zero gate bias are found. Negative differential resistance (NDR) phenomena under illumination which degrades the transconductances are also observed and discussed.",

author = "Wu, {C. L.} and Hsu, {W. C.} and Shieh, {H. M.} and Kao, {M. J.}",

note = "Funding Information: Acknowledgement--This work was supported by the National Science Council, Republic of China, under contract no. NSC82-0404-E006-43 I.",

year = "1995",

month = feb,

doi = "10.1016/0038-1101(94)E0078-S",

language = "English",

volume = "38",

pages = "433--436",

journal = "Solid State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "2",

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TY - JOUR

T1 - Depletion-MIS-like InGaAs/GaAs delta-doped structures with high breakdown voltage and large gate voltage swing

AU - Wu, C. L.

AU - Hsu, W. C.

AU - Shieh, H. M.

AU - Kao, M. J.

N1 - Funding Information: Acknowledgement--This work was supported by the National Science Council, Republic of China, under contract no. NSC82-0404-E006-43 I.

PY - 1995/2

Y1 - 1995/2

N2 - Depletion-MIS-like GaAs/In0.25Ga0.75As/GaAs delta-doped heterostructure field effect transistors (HFETs) have been successfully grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). Hall mobilities as high as 5600 (22000) and 3920 (18400) cm2/V.s with sheet carrier densities of 2 (1.8) and 4.3 (2.5) × 1012 cm-2 for single and double delta-doped structures at 300 (77) K, respectively are achieved. Breakdown voltages as high as 26 V for single and 16 V for double delta-doped structures are obtained. Meanwhile, the structures in this work reveal improved gate voltage swings. By virtue of the photoluminescence (PL) spectra, most of the carriers transferring from the delta-doped layer to the InGaAs channel at zero gate bias are found. Negative differential resistance (NDR) phenomena under illumination which degrades the transconductances are also observed and discussed.

AB - Depletion-MIS-like GaAs/In0.25Ga0.75As/GaAs delta-doped heterostructure field effect transistors (HFETs) have been successfully grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). Hall mobilities as high as 5600 (22000) and 3920 (18400) cm2/V.s with sheet carrier densities of 2 (1.8) and 4.3 (2.5) × 1012 cm-2 for single and double delta-doped structures at 300 (77) K, respectively are achieved. Breakdown voltages as high as 26 V for single and 16 V for double delta-doped structures are obtained. Meanwhile, the structures in this work reveal improved gate voltage swings. By virtue of the photoluminescence (PL) spectra, most of the carriers transferring from the delta-doped layer to the InGaAs channel at zero gate bias are found. Negative differential resistance (NDR) phenomena under illumination which degrades the transconductances are also observed and discussed.

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DO - 10.1016/0038-1101(94)E0078-S

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EP - 436

JO - Solid State Electronics

JF - Solid State Electronics

IS - 2

ER -

Depletion-MIS-like InGaAs/GaAs delta-doped structures with high breakdown voltage and large gate voltage swing

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