Depletion-MIS-like InGaAs/GaAs delta-doped structures with high breakdown voltage and large gate voltage swing

C. L. Wu, W. C. Hsu, H. M. Shieh, M. J. Kao

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1 Citation (Scopus)

Abstract

Depletion-MIS-like GaAs/In0.25Ga0.75As/GaAs delta-doped heterostructure field effect transistors (HFETs) have been successfully grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). Hall mobilities as high as 5600 (22000) and 3920 (18400) cm2/V.s with sheet carrier densities of 2 (1.8) and 4.3 (2.5) × 1012 cm-2 for single and double delta-doped structures at 300 (77) K, respectively are achieved. Breakdown voltages as high as 26 V for single and 16 V for double delta-doped structures are obtained. Meanwhile, the structures in this work reveal improved gate voltage swings. By virtue of the photoluminescence (PL) spectra, most of the carriers transferring from the delta-doped layer to the InGaAs channel at zero gate bias are found. Negative differential resistance (NDR) phenomena under illumination which degrades the transconductances are also observed and discussed.

Original languageEnglish
Pages (from-to)433-436
Number of pages4
JournalSolid State Electronics
Volume38
Issue number2
DOIs
Publication statusPublished - 1995 Feb

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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