Depletion-mode GaAs MOSFET with a low temperature selective grown oxide gate

J. Y. Wu, H. H. Wang, P. W. Sze, Y. H. Wang, M. P. Houng

Research output: Contribution to conferencePaperpeer-review

Abstract

A selective oxidation process by using metal as the mask is proposed to fabricate the n-channel depletion-mode GaAs MOSFET with liquid phase chemical-enhanced oxidation method at low temperature. Metals are deposited firstly for source and drain and then used as the mask for growing gate oxide and side-wall passivation, simultaneously. The proposed selective oxidation process can simplify one mask process to fabricate GaAs MOSFET and achieve more reliable oxide layers. The fabricated 2μm gate-length GaAs MOSFET shows the transconductance larger than 75 mS/mm with a selective grown gate oxide thickness of 35 nm. In addition, the microwave characteristics of short-circuit current gain cutoff frequency FT and a maximum oscillation frequency fmax have also been demonstrated, respectively.

Original languageEnglish
Pages149-154
Number of pages6
Publication statusPublished - 2000 Dec 1
Event27th International Symposium on Compound Semiconductors - Monterey, CA, United States
Duration: 2000 Oct 22000 Oct 5

Other

Other27th International Symposium on Compound Semiconductors
CountryUnited States
CityMonterey, CA
Period00-10-0200-10-05

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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