Deposition and properties of Mo-N films

Kwang Lung Lin, Yu Jin Ho

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


Mo-N films were deposited on glass or silicon wafers by reactive sputtering. The growth rate, composition, microstructure, and sheet resistance of the films were analyzed and determined to be controlled by deposition power as well as by N2 partial pressure. Grain refining, which increases the sheet resistivity of Mo-N films, was observed at higher N2 partial pressure as well as at lower deposition power input. t-mo2N was achieved at suitable conditions. We propose that the films formed by the reaction of nitrogen and Mo atoms on the substrate surface.

Original languageEnglish
Pages (from-to)2872-2876
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number6
Publication statusPublished - 1995 Nov

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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