Mo-N films were deposited on glass or silicon wafers by reactive sputtering. The growth rate, composition, microstructure, and sheet resistance of the films were analyzed and determined to be controlled by deposition power as well as by N2 partial pressure. Grain refining, which increases the sheet resistivity of Mo-N films, was observed at higher N2 partial pressure as well as at lower deposition power input. t-mo2N was achieved at suitable conditions. We propose that the films formed by the reaction of nitrogen and Mo atoms on the substrate surface.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - 1995 Jan 1|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films