Deposition of high quality silicon dioxide on Hg1-xCdxTe by low-temperature liquid phase deposition method

N. F. Wang, W. J. Chang, Mau-phon Houng, Yeong-Her Wang, C. J. Huang

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Abstract

A low temperature (35-45°C) process of liquid phase deposition (LPD) for the growth of silicon dioxide (SiO2) on Hg1-xCdxTe is proposed. To enhance the formation of SiO2, the HgCdTe surface has to be treated by ammonia solution before LPD. A thin native oxide which is formed by previous surface treatment involving OH- radicals greatly enhances the SiO2 deposition on HgCdTe. Thus, SiO2 films with a high refractive index (1.465) and a low p-etching rate (34 Å/s) were obtained. Auger electron spectroscopy depth profile shows less interdiffusion of constituent atoms between the SiO2 layer and the HgCdTe substrate. Electrical properties of the SiO2/p-HgCdTe interface are also characterized at 77 K. It is found that the p-HgCdTe surface is accumulated and the effective surface charge density is estimated to be -2.25×1010 cm-2. The leakage current and dielectric breakdown strength are also found to be 0.356 nA (at -5 V) and above 650 KV/cm, respectively. Furthermore, the growth mechanism of LPD-SiO2 on HgCdTe is proposed.

Original languageEnglish
Pages (from-to)102-107
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume17
Issue number1
DOIs
Publication statusPublished - 1999 Jan 1

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Silicon Dioxide
liquid phases
Silica
silicon dioxide
Liquids
Temperature
Auger electron spectroscopy
Surface charge
Charge density
surface treatment
Electric breakdown
Ammonia
Leakage currents
Oxides
Auger spectroscopy
electron spectroscopy
Surface treatment
ammonia
Etching
Refractive index

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

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title = "Deposition of high quality silicon dioxide on Hg1-xCdxTe by low-temperature liquid phase deposition method",
abstract = "A low temperature (35-45°C) process of liquid phase deposition (LPD) for the growth of silicon dioxide (SiO2) on Hg1-xCdxTe is proposed. To enhance the formation of SiO2, the HgCdTe surface has to be treated by ammonia solution before LPD. A thin native oxide which is formed by previous surface treatment involving OH- radicals greatly enhances the SiO2 deposition on HgCdTe. Thus, SiO2 films with a high refractive index (1.465) and a low p-etching rate (34 {\AA}/s) were obtained. Auger electron spectroscopy depth profile shows less interdiffusion of constituent atoms between the SiO2 layer and the HgCdTe substrate. Electrical properties of the SiO2/p-HgCdTe interface are also characterized at 77 K. It is found that the p-HgCdTe surface is accumulated and the effective surface charge density is estimated to be -2.25×1010 cm-2. The leakage current and dielectric breakdown strength are also found to be 0.356 nA (at -5 V) and above 650 KV/cm, respectively. Furthermore, the growth mechanism of LPD-SiO2 on HgCdTe is proposed.",
author = "Wang, {N. F.} and Chang, {W. J.} and Mau-phon Houng and Yeong-Her Wang and Huang, {C. J.}",
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T1 - Deposition of high quality silicon dioxide on Hg1-xCdxTe by low-temperature liquid phase deposition method

AU - Wang, N. F.

AU - Chang, W. J.

AU - Houng, Mau-phon

AU - Wang, Yeong-Her

AU - Huang, C. J.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - A low temperature (35-45°C) process of liquid phase deposition (LPD) for the growth of silicon dioxide (SiO2) on Hg1-xCdxTe is proposed. To enhance the formation of SiO2, the HgCdTe surface has to be treated by ammonia solution before LPD. A thin native oxide which is formed by previous surface treatment involving OH- radicals greatly enhances the SiO2 deposition on HgCdTe. Thus, SiO2 films with a high refractive index (1.465) and a low p-etching rate (34 Å/s) were obtained. Auger electron spectroscopy depth profile shows less interdiffusion of constituent atoms between the SiO2 layer and the HgCdTe substrate. Electrical properties of the SiO2/p-HgCdTe interface are also characterized at 77 K. It is found that the p-HgCdTe surface is accumulated and the effective surface charge density is estimated to be -2.25×1010 cm-2. The leakage current and dielectric breakdown strength are also found to be 0.356 nA (at -5 V) and above 650 KV/cm, respectively. Furthermore, the growth mechanism of LPD-SiO2 on HgCdTe is proposed.

AB - A low temperature (35-45°C) process of liquid phase deposition (LPD) for the growth of silicon dioxide (SiO2) on Hg1-xCdxTe is proposed. To enhance the formation of SiO2, the HgCdTe surface has to be treated by ammonia solution before LPD. A thin native oxide which is formed by previous surface treatment involving OH- radicals greatly enhances the SiO2 deposition on HgCdTe. Thus, SiO2 films with a high refractive index (1.465) and a low p-etching rate (34 Å/s) were obtained. Auger electron spectroscopy depth profile shows less interdiffusion of constituent atoms between the SiO2 layer and the HgCdTe substrate. Electrical properties of the SiO2/p-HgCdTe interface are also characterized at 77 K. It is found that the p-HgCdTe surface is accumulated and the effective surface charge density is estimated to be -2.25×1010 cm-2. The leakage current and dielectric breakdown strength are also found to be 0.356 nA (at -5 V) and above 650 KV/cm, respectively. Furthermore, the growth mechanism of LPD-SiO2 on HgCdTe is proposed.

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