TY - JOUR
T1 - Deposition of micro-crystalline β-C3N4 films by an inductively-coupled-plasma (ICP) sputtering method
AU - Hsu, Chia Yuan
AU - Hong, Franklin Chau Nan
PY - 1998
Y1 - 1998
N2 - The sputtering of a graphite target with N2 ions in an inductively-coupled plasma was employed to deposit C3N4 films in hydrogen-free atmosphere with a high degree of gas dissociation. Transmission electron diffraction patterns of the films indicate the existence of ultrafine-crystallites, structurally analogous to β-C3N4. Scanning electron micrographs show that the crystallites are less than 40 nm in diameter. From X-ray photoelectron spectroscopy (XPS) analysis it is determined that the films exhibit predominantly C - N bonding (with respect to C-to-N triple bonding) and no significant C - C bonding is observed. Besides, both the [N]/[C] ratio and the percentage of C - N bonds in the film, as determined from XPS, increase upon increasing the radio frequency power from 100 W to 600 W, with the [N]/[C] ratio attaining a value of 1.28 at 600 W. The measurement of the [N2+]/[N2] ratio by optical emission spectroscopy indicates the enhancement of the gas dissociation with increasing radio frequency power. The results suggest that β-C3N4 crystallites are favorably formed upon increasing the degree of gas dissociation.
AB - The sputtering of a graphite target with N2 ions in an inductively-coupled plasma was employed to deposit C3N4 films in hydrogen-free atmosphere with a high degree of gas dissociation. Transmission electron diffraction patterns of the films indicate the existence of ultrafine-crystallites, structurally analogous to β-C3N4. Scanning electron micrographs show that the crystallites are less than 40 nm in diameter. From X-ray photoelectron spectroscopy (XPS) analysis it is determined that the films exhibit predominantly C - N bonding (with respect to C-to-N triple bonding) and no significant C - C bonding is observed. Besides, both the [N]/[C] ratio and the percentage of C - N bonds in the film, as determined from XPS, increase upon increasing the radio frequency power from 100 W to 600 W, with the [N]/[C] ratio attaining a value of 1.28 at 600 W. The measurement of the [N2+]/[N2] ratio by optical emission spectroscopy indicates the enhancement of the gas dissociation with increasing radio frequency power. The results suggest that β-C3N4 crystallites are favorably formed upon increasing the degree of gas dissociation.
UR - http://www.scopus.com/inward/record.url?scp=0032092692&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0032092692&partnerID=8YFLogxK
U2 - 10.1143/jjap.37.l675
DO - 10.1143/jjap.37.l675
M3 - Article
AN - SCOPUS:0032092692
SN - 0021-4922
VL - 37
SP - L675-L678
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 6 A
ER -