Deposition of micro-crystalline β-C3N4 films by an inductively-coupled-plasma (ICP) sputtering method

Chia Yuan Hsu, Franklin Chau Nan Hong

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19 Citations (Scopus)

Abstract

The sputtering of a graphite target with N2 ions in an inductively-coupled plasma was employed to deposit C3N4 films in hydrogen-free atmosphere with a high degree of gas dissociation. Transmission electron diffraction patterns of the films indicate the existence of ultrafine-crystallites, structurally analogous to β-C3N4. Scanning electron micrographs show that the crystallites are less than 40 nm in diameter. From X-ray photoelectron spectroscopy (XPS) analysis it is determined that the films exhibit predominantly C - N bonding (with respect to C-to-N triple bonding) and no significant C - C bonding is observed. Besides, both the [N]/[C] ratio and the percentage of C - N bonds in the film, as determined from XPS, increase upon increasing the radio frequency power from 100 W to 600 W, with the [N]/[C] ratio attaining a value of 1.28 at 600 W. The measurement of the [N2+]/[N2] ratio by optical emission spectroscopy indicates the enhancement of the gas dissociation with increasing radio frequency power. The results suggest that β-C3N4 crystallites are favorably formed upon increasing the degree of gas dissociation.

Original languageEnglish
Pages (from-to)L675-L678
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume37
Issue number6 A
DOIs
Publication statusPublished - 1998

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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