TY - JOUR
T1 - Deposition of Oxide Thin Films by Ultrasonic Spray Pyrolysis Deposition for InGaZnO Thin-Film Transistor Applications
AU - Liu, Han Yin
AU - Hung, Chun Chen
AU - Hsu, Wei Chou
N1 - Funding Information:
Manuscript received August 5, 2018; revised August 15, 2018; accepted August 17, 2018. Date of publication August 23, 2018; date of current version September 25, 2018. This work was supported by the Ministry of Science and Technology, Taiwan, under Contract MOST 106-2221-E-035-075-MY3. The review of this letter was arranged by Editor A. Chin. (Corresponding author: Wei-Chou Hsu.) H.-Y. Liu is with the Department of Electronic Engineering, Feng Chia University, Taichung 40724, Taiwan.
Publisher Copyright:
© 1980-2012 IEEE.
PY - 2018/10
Y1 - 2018/10
N2 - This letter used ultrasonic spray pyrolysis deposition (USPD) to deposit SnO2:F, Al2O3, and InGaZnO thin films to, respectively, serve as the bottom gate, gate dielectric layer, and channel layer of a thin-film transistor. For comparison, the sputter-deposited InGaZnO thin film was prepared as the reference sample. X-ray diffraction and X-ray photoelectron spectroscopy were used to observe the crystal structure and oxygen vacancy of the InGaZnO thin films. The optical characteristics were observed using the photoluminescence spectrum and an optical spectrometer. The InGaZnO-based TFT deposited by USPD shows competitive electrical characteristics compared with the sputter-deposited one. However, the USPD-deposited InGaZnO-based TFT has unstable negative bias illumination stress characteristic. Nevertheless, this letter provides an alternative and relatively cost-effective method for fabricating InGaZnO TFTs.
AB - This letter used ultrasonic spray pyrolysis deposition (USPD) to deposit SnO2:F, Al2O3, and InGaZnO thin films to, respectively, serve as the bottom gate, gate dielectric layer, and channel layer of a thin-film transistor. For comparison, the sputter-deposited InGaZnO thin film was prepared as the reference sample. X-ray diffraction and X-ray photoelectron spectroscopy were used to observe the crystal structure and oxygen vacancy of the InGaZnO thin films. The optical characteristics were observed using the photoluminescence spectrum and an optical spectrometer. The InGaZnO-based TFT deposited by USPD shows competitive electrical characteristics compared with the sputter-deposited one. However, the USPD-deposited InGaZnO-based TFT has unstable negative bias illumination stress characteristic. Nevertheless, this letter provides an alternative and relatively cost-effective method for fabricating InGaZnO TFTs.
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U2 - 10.1109/LED.2018.2866288
DO - 10.1109/LED.2018.2866288
M3 - Article
AN - SCOPUS:85052716660
SN - 0741-3106
VL - 39
SP - 1520
EP - 1523
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 10
M1 - 8444690
ER -