Deposition of si02 films on strained sige layer by direct photo chemical vapor deposition

Chung Te Lin, Shoou Jinn Chang, Deepok K. Nayak, Yasuhiro Shiraki

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

High quality SÌO2 layers were deposited on strained SiGe by direct photochemical vapor deposition with a deuterium lamp as the excitation source. It was found that the deposition rate increases linearly with the chamber pressure. The Auger electron spectroscopy profile shows that neither was Ge rejected nor was a Ge-rich layer formed after devices were fabricated. At room temperature, the leakage current is about 3 x 10-9А/cm2under a 2x106V/cm electric field. The breakdown field can reach over 16 MV/cm for these SiGe metal-oxide-semiconductor (MOS) diodes.

Original languageEnglish
Pages (from-to)72-74
Number of pages3
JournalJapanese Journal of Applied Physics
Volume34
Issue number1
DOIs
Publication statusPublished - 1995 Jan

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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