Deposition of SiO2 layers on 4H-SiC by photochemical vapor deposition

Yu Zung Chiou; Chia Sheng Chang; Shoou Jinn Chang; Yan Kuin Su; Jung Ran Chiou; Bohr Ran Huang; Jone F. Chen

doi:10.1116/1.1542617

Deposition of SiO₂ layers on 4H-SiC by photochemical vapor deposition

Yu Zung Chiou, Chia Sheng Chang, Shoou Jinn Chang, Yan Kuin Su, Jung Ran Chiou, Bohr Ran Huang, Jone F. Chen

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

SiO₂ insulating layers were deposited onto 4H-SiC substrates by photo-CVD technique. It was found that the limiting factor for the SiO₂ growth rate could involve the density of SiH₄ molecules available to form SiH_x or the density of O₂ molecules available to form excited O atoms. The leakage current was only 4.15X10^-8 A/cm² with an applied field of 4 MV/cm for the 500°C photo-CVD grown Al/SiO₂/4H-SiC MIS capacitor.

Original language	English
Pages (from-to)	329-331
Number of pages	3
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	21
Issue number	1 SPEC.
DOIs	https://doi.org/10.1116/1.1542617
Publication status	Published - 2003 Jan

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1116/1.1542617

Cite this

@article{7bfd3d78ebc24c09bcca4c242da9bd0a,

title = "Deposition of SiO2 layers on 4H-SiC by photochemical vapor deposition",

abstract = "SiO2 insulating layers were deposited onto 4H-SiC substrates by photo-CVD technique. It was found that the limiting factor for the SiO2 growth rate could involve the density of SiH4 molecules available to form SiHx or the density of O2 molecules available to form excited O atoms. The leakage current was only 4.15X10-8 A/cm2 with an applied field of 4 MV/cm for the 500°C photo-CVD grown Al/SiO2/4H-SiC MIS capacitor.",

author = "Chiou, {Yu Zung} and Chang, {Chia Sheng} and Chang, {Shoou Jinn} and Su, {Yan Kuin} and Chiou, {Jung Ran} and Huang, {Bohr Ran} and Chen, {Jone F.}",

year = "2003",

month = jan,

doi = "10.1116/1.1542617",

language = "English",

volume = "21",

pages = "329--331",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "1 SPEC.",

}

TY - JOUR

T1 - Deposition of SiO2 layers on 4H-SiC by photochemical vapor deposition

AU - Chiou, Yu Zung

AU - Chang, Chia Sheng

AU - Chang, Shoou Jinn

AU - Su, Yan Kuin

AU - Chiou, Jung Ran

AU - Huang, Bohr Ran

AU - Chen, Jone F.

PY - 2003/1

Y1 - 2003/1

N2 - SiO2 insulating layers were deposited onto 4H-SiC substrates by photo-CVD technique. It was found that the limiting factor for the SiO2 growth rate could involve the density of SiH4 molecules available to form SiHx or the density of O2 molecules available to form excited O atoms. The leakage current was only 4.15X10-8 A/cm2 with an applied field of 4 MV/cm for the 500°C photo-CVD grown Al/SiO2/4H-SiC MIS capacitor.

AB - SiO2 insulating layers were deposited onto 4H-SiC substrates by photo-CVD technique. It was found that the limiting factor for the SiO2 growth rate could involve the density of SiH4 molecules available to form SiHx or the density of O2 molecules available to form excited O atoms. The leakage current was only 4.15X10-8 A/cm2 with an applied field of 4 MV/cm for the 500°C photo-CVD grown Al/SiO2/4H-SiC MIS capacitor.

UR - http://www.scopus.com/inward/record.url?scp=0037207723&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037207723&partnerID=8YFLogxK

U2 - 10.1116/1.1542617

DO - 10.1116/1.1542617

M3 - Article

AN - SCOPUS:0037207723

SN - 1071-1023

VL - 21

SP - 329

EP - 331

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 1 SPEC.

ER -

Deposition of SiO₂ layers on 4H-SiC by photochemical vapor deposition

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this