Deposition of SiO2 layers on 4H-SiC by photochemical vapor deposition

Yu Zung Chiou, Chia Sheng Chang, Shoou Jinn Chang, Yan Kuin Su, Jung Ran Chiou, Bohr Ran Huang, Jone F. Chen

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


SiO2 insulating layers were deposited onto 4H-SiC substrates by photo-CVD technique. It was found that the limiting factor for the SiO2 growth rate could involve the density of SiH4 molecules available to form SiHx or the density of O2 molecules available to form excited O atoms. The leakage current was only 4.15X10-8 A/cm2 with an applied field of 4 MV/cm for the 500°C photo-CVD grown Al/SiO2/4H-SiC MIS capacitor.

Original languageEnglish
Pages (from-to)329-331
Number of pages3
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number1 SPEC.
Publication statusPublished - 2003 Jan

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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