Deposition of SiO2 layers on GaN by photochemical vapor deposition

Shoou Jinn Chang; Yan Kuin Su; Yu Zung Chiou; Jung Ran Chiou; Bohr Ran Huang; Chia Sheng Chang; Jone F. Chen

doi:10.1149/1.1534598

Deposition of SiO₂ layers on GaN by photochemical vapor deposition

Shoou Jinn Chang, Yan Kuin Su, Yu Zung Chiou, Jung Ran Chiou, Bohr Ran Huang, Chia Sheng Chang, Jone F. Chen

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

SiO₂ insulating layers were first deposited onto GaN by photochemical vapor deposition (photo-CVD) technology using a deuterium (D₂) lamp as the excitation source. Physical, chemical, and electrical characteristics of the Al/SiO₂/GaN metal-insulator-semiconductor (MIS) capacitors are reported for the first time. It was also found that the limiting factor of SiO₂ growth rate was the number of SiH₄ and O₂ molecules available to provide excited Si and O atoms. Furthermore, it was found from high-frequency capacitance-voltage measurements that the photo-CVD SiO₂/n-GaN interface state density, D_it, was estimated to be 8.4 × 10¹¹ cm^-2 eV^-1 for the photo-CVD SiO₂ layers prepared at 300°C. With an applied field of 4 MV/cm, the oxide leakage current density was found to be only 6.6 × 10^-7 A/cm².

Original language	English
Pages (from-to)	C77-C80
Journal	Journal of the Electrochemical Society
Volume	150
Issue number	2
DOIs	https://doi.org/10.1149/1.1534598
Publication status	Published - 2003 Feb

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1149/1.1534598

Cite this

@article{5bac4fd7fad84e4fa709356bbbd0a754,

title = "Deposition of SiO2 layers on GaN by photochemical vapor deposition",

abstract = "SiO2 insulating layers were first deposited onto GaN by photochemical vapor deposition (photo-CVD) technology using a deuterium (D2) lamp as the excitation source. Physical, chemical, and electrical characteristics of the Al/SiO2/GaN metal-insulator-semiconductor (MIS) capacitors are reported for the first time. It was also found that the limiting factor of SiO2 growth rate was the number of SiH4 and O2 molecules available to provide excited Si and O atoms. Furthermore, it was found from high-frequency capacitance-voltage measurements that the photo-CVD SiO2/n-GaN interface state density, Dit, was estimated to be 8.4 × 1011 cm-2 eV-1 for the photo-CVD SiO2 layers prepared at 300°C. With an applied field of 4 MV/cm, the oxide leakage current density was found to be only 6.6 × 10-7 A/cm2.",

author = "Chang, {Shoou Jinn} and Su, {Yan Kuin} and Chiou, {Yu Zung} and Chiou, {Jung Ran} and Huang, {Bohr Ran} and Chang, {Chia Sheng} and Chen, {Jone F.}",

year = "2003",

month = feb,

doi = "10.1149/1.1534598",

language = "English",

volume = "150",

pages = "C77--C80",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "2",

}

TY - JOUR

T1 - Deposition of SiO2 layers on GaN by photochemical vapor deposition

AU - Chang, Shoou Jinn

AU - Su, Yan Kuin

AU - Chiou, Yu Zung

AU - Chiou, Jung Ran

AU - Huang, Bohr Ran

AU - Chang, Chia Sheng

AU - Chen, Jone F.

PY - 2003/2

Y1 - 2003/2

N2 - SiO2 insulating layers were first deposited onto GaN by photochemical vapor deposition (photo-CVD) technology using a deuterium (D2) lamp as the excitation source. Physical, chemical, and electrical characteristics of the Al/SiO2/GaN metal-insulator-semiconductor (MIS) capacitors are reported for the first time. It was also found that the limiting factor of SiO2 growth rate was the number of SiH4 and O2 molecules available to provide excited Si and O atoms. Furthermore, it was found from high-frequency capacitance-voltage measurements that the photo-CVD SiO2/n-GaN interface state density, Dit, was estimated to be 8.4 × 1011 cm-2 eV-1 for the photo-CVD SiO2 layers prepared at 300°C. With an applied field of 4 MV/cm, the oxide leakage current density was found to be only 6.6 × 10-7 A/cm2.

AB - SiO2 insulating layers were first deposited onto GaN by photochemical vapor deposition (photo-CVD) technology using a deuterium (D2) lamp as the excitation source. Physical, chemical, and electrical characteristics of the Al/SiO2/GaN metal-insulator-semiconductor (MIS) capacitors are reported for the first time. It was also found that the limiting factor of SiO2 growth rate was the number of SiH4 and O2 molecules available to provide excited Si and O atoms. Furthermore, it was found from high-frequency capacitance-voltage measurements that the photo-CVD SiO2/n-GaN interface state density, Dit, was estimated to be 8.4 × 1011 cm-2 eV-1 for the photo-CVD SiO2 layers prepared at 300°C. With an applied field of 4 MV/cm, the oxide leakage current density was found to be only 6.6 × 10-7 A/cm2.

UR - http://www.scopus.com/inward/record.url?scp=0037329129&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037329129&partnerID=8YFLogxK

U2 - 10.1149/1.1534598

DO - 10.1149/1.1534598

M3 - Article

AN - SCOPUS:0037329129

SN - 0013-4651

VL - 150

SP - C77-C80

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 2

ER -