Design and Demonstration of Tunable Amplified Sensitivity of AlGaN/GaN High Electron Mobility Transistor (HEMT)-Based Biosensors in Human Serum

Tse Yu Tai, Anirban Sinha, Indu Sarangadharan, Anil Kumar Pulikkathodi, Shin Li Wang, Geng Yen Lee, Jen Inn Chyi, Shu-Chu Shiesh, Gwo Bin Lee, Yu Lin Wang

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We have developed a swift and simplistic protein immunoassay using aptamer functionalized AlGaN/GaN high electron mobility transistors (HEMTs). The unique design of the sensor facilitates protein detection in a physiological salt environment overcoming charge screening effects, without requiring sample preprocessing. This study reports a tunable and amplified sensitivity of solution-gated electric double layer (EDL) HEMT-based biosensors, which demonstrates significantly enhanced sensitivity by designing a smaller gap between the gate electrode and the detection, and by operating at higher gate voltage. Sensitivity is calculated by quantifying NT-proBNP, a clinical biomarker of heart failure, in buffer and untreated human serum samples. The biosensor depicts elevated sensitivity and high selectivity. Furthermore, detailed investigation of the amplified sensitivity in an increased ionic strength environment is conducted, and it is revealed that a high sensitivity of 80.54 mV/decade protein concentration can be achieved, which is much higher than that of previously reported FET biosensors. This sensor technology demonstrates immense potential in developing surface affinity sensors for clinical diagnostics.

Original languageEnglish
Pages (from-to)5953-5960
Number of pages8
JournalAnalytical chemistry
Volume91
Issue number9
DOIs
Publication statusPublished - 2019 May 7

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High electron mobility transistors
Biosensors
Demonstrations
Sensors
Proteins
Biomarkers
Field effect transistors
Ionic strength
Buffers
Screening
Salts
Electrodes
Electric potential
aluminum gallium nitride

All Science Journal Classification (ASJC) codes

  • Analytical Chemistry

Cite this

Tai, Tse Yu ; Sinha, Anirban ; Sarangadharan, Indu ; Pulikkathodi, Anil Kumar ; Wang, Shin Li ; Lee, Geng Yen ; Chyi, Jen Inn ; Shiesh, Shu-Chu ; Lee, Gwo Bin ; Wang, Yu Lin. / Design and Demonstration of Tunable Amplified Sensitivity of AlGaN/GaN High Electron Mobility Transistor (HEMT)-Based Biosensors in Human Serum. In: Analytical chemistry. 2019 ; Vol. 91, No. 9. pp. 5953-5960.
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Design and Demonstration of Tunable Amplified Sensitivity of AlGaN/GaN High Electron Mobility Transistor (HEMT)-Based Biosensors in Human Serum. / Tai, Tse Yu; Sinha, Anirban; Sarangadharan, Indu; Pulikkathodi, Anil Kumar; Wang, Shin Li; Lee, Geng Yen; Chyi, Jen Inn; Shiesh, Shu-Chu; Lee, Gwo Bin; Wang, Yu Lin.

In: Analytical chemistry, Vol. 91, No. 9, 07.05.2019, p. 5953-5960.

Research output: Contribution to journalArticle

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AU - Pulikkathodi, Anil Kumar

AU - Wang, Shin Li

AU - Lee, Geng Yen

AU - Chyi, Jen Inn

AU - Shiesh, Shu-Chu

AU - Lee, Gwo Bin

AU - Wang, Yu Lin

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